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    MPR 20 20 CF RESISTOR Search Results

    MPR 20 20 CF RESISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    37-1409 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    37-2182 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    TIPD128 Texas Instruments Capacitive Load Drive Verified Reference Design Using an Isolation Resistor Visit Texas Instruments
    TMP392A2DRLR Texas Instruments TMP392 dual-channel (hot & warm), resistor-programmable temperature switch Visit Texas Instruments Buy
    TMP392A3DRLR Texas Instruments TMP392 dual-channel (hot & warm), resistor-programmable temperature switch Visit Texas Instruments Buy

    MPR 20 20 CF RESISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TR20

    Abstract: TR35 TR50
    Text: MR Series – Low Resistance Value Molded 2 Leads Resistors Resistance Value Chart C 0.005 0.01 0.02 D A B 0.025 0.03 0.05 Features: • Metal element resistors • Excellent load life stability • Inherently non-inductive • Tinned copper leads • Low temperature coefficient • High power to size ratio


    Original     		400ppm/ KAL10- KAL25- KAL50- TR20 TR35 TR50 PDF

    nt5cb64m16

    Abstract: NT5CB64m NT5CB64M16AP NT5CB64 NT5CB64M16AP-CF NT5CB64M16AP-BE nanya NT5CB64M16AP NT5CB256M4AN NT5CB64M16AP-CG NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 78-Ball 96-Ball nt5cb64m16 NT5CB64m NT5CB64M16AP NT5CB64 NT5CB64M16AP-CF NT5CB64M16AP-BE nanya NT5CB64M16AP NT5CB64M16AP-CG NT5CB64M16AP-AC PDF

    NT5CB64M16AP-BE

    Abstract: No abstract text available
    Text: NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP 1Gb DDR3 SDRAM A-Die Features • VDD=VDDQ=1.5V ± 0.075V JEDEC Standard Power Supply • Write Leveling • OCD Calibration • 8 internal banks (BA0 - BA2) • Dynamic ODT (Rtt_Nom & Rtt_WR) • Differential clock inputs (CK, CK)


    Original     		NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB64M16AP-BE PDF

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC PDF

    nt5cb64m16

    Abstract: NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB256M4AN NT5CB64M16AP srt 8n NT5CB64M16AP-CG nt5cb64m16ap-dh NT5CB128M8 NT5CB256M4AN-CG
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.75V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball nt5cb64m16 NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB64M16AP srt 8n NT5CB64M16AP-CG nt5cb64m16ap-dh NT5CB128M8 NT5CB256M4AN-CG PDF

    nt5cb64m16

    Abstract: NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB64M16AP NT5CB64M16AP-BE nt5cb128m8an-cg NT5CB128M8AN-DG
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.75V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball Rate32 nt5cb64m16 NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB64M16AP NT5CB64M16AP-BE nt5cb128m8an-cg NT5CB128M8AN-DG PDF

    NT5CB256M4AN-BE

    Abstract: No abstract text available
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.75V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB256M4AN-BE PDF

    NT5CB64m

    Abstract: nt5cb64m16 NT5CB64 NT5CB128M8AN NT5CB128 NT5CB256m
    Text: NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP 1Gb DDR3 SDRAM A-Die Preliminary Edition Features • VDD=VDDQ=1.5V ± 0.075V JEDEC Standard Power Supply • Write Leveling • OCD Calibration • 8 internal banks (BA0 - BA2) • Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB64m nt5cb64m16 NT5CB64 NT5CB128 NT5CB256m PDF

    Dow corning 7090

    Abstract: SMD transistor Marking 13w smd transistor marking 12W 0.005 ohm 2w 1225 size smd code marking rac SMD CODE rwt 5W 6.8 ohm 12W SMD MARKING CODE HVR 05M SEI RNF resistor Datasheet
    Text: Stackpole Electronics, Inc. Table of Contents Resistive Product Solutions Thick Film Chips Page RMC SERIES RHC SERIES RMCP SERIES RMCS SERIES HMC SERIES HVC SERIES RVC SERIES RPC SERIES FCR SERIES RGC SERIES - General Purpose Thick Film Chip Resistors High Power Thick Film Chip Resistors


    Original     		PDF

    NT5CB256M8BN-DG

    Abstract: NT5CB128M16BP NT5CB256M8BN-DH NT5CB128M16BP-CG
    Text: 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB512M4BN NT5CB256M8BN NT5CB128M16BP 78-Ball 96-Ball Rate32 483tomer NT5CB256M8BN-DG NT5CB128M16BP NT5CB256M8BN-DH NT5CB128M16BP-CG PDF

    "2Gb DDR3 SDRAM"

    Abstract: NT5CB256M8BN
    Text: 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP Feature  1.5V ± 0.075V / 1.35V +0.0675V/-0.1V JEDEC Standard Power Supply  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB512M4BN NT5CB256M8BN NT5CB128M16BP NT5CC512M4BN NT5CC256M8BN NT5CC128M16BP 675V/-0 78-Ball 96-Ball "2Gb DDR3 SDRAM" PDF

    NT5CB128M8CN

    Abstract: NT5CB256M4CN NT5CB128
    Text: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB256M4CN NT5CB128M8CN 78-Ball Rate32 NT5CB128M8CN NT5CB128 PDF

    nt5cb64m16

    Abstract: NT5CB64M16DP-CF NT5CB64M16DP-DH NT5CB64m NT5CB64 NT5CB64m16dp_cf NT5CB64M16DP-BE NT5CB128M8DN-CFI NT5CB128M8DN NT5CB64M16D
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Speed Bins -BE* -CF/CFI* -DH* -EI* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066-CL7) DDR3/L-1333-CL8) DDR3/L-1600-CL10) DDR3-1866-CL11) nt5cb64m16 NT5CB64M16DP-CF NT5CB64M16DP-DH NT5CB64m NT5CB64 NT5CB64m16dp_cf NT5CB64M16DP-BE NT5CB128M8DN-CFI NT5CB128M8DN NT5CB64M16D PDF

    NT5CB256M8

    Abstract: nt5cb128m16 NT5CB256 NT5CB256M8BN-CG NT5CB256M8BN-BE NT5CB256M4CN NT5CB512M4BN NT5CB128M
    Text: 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB512M4BN NT5CB256M8BN NT5CB128M16BP 78-Ball 96-Ball Rate32 483tomer NT5CB256M8 nt5cb128m16 NT5CB256 NT5CB256M8BN-CG NT5CB256M8BN-BE NT5CB256M4CN NT5CB128M PDF

    English grammar

    Abstract: MCF52223 ICR016 ICR034 ICR045 ICR063 MCF52221 FlexCAN manual FlexCAN
    Text: Freescale Semiconductor Reference Manual Addendum MCF52223RMAD Rev. 3, 04/2007 MCF52223 Reference Manual Errata by: Microcontroller Division This errata document describes corrections to the MCF52223 Reference Manual, order number MCF52223RM. For convenience, the addenda items are grouped by revision. Please check our website at


    Original     		MCF52223RMAD MCF52223 MCF52223RM. MCF52223RM English grammar ICR016 ICR034 ICR045 ICR063 MCF52221 FlexCAN manual FlexCAN PDF

    nt5cb64m16

    Abstract: MPR 20 20 CF RESISTOR NT5CB64M16DP-DH NT5CB64 DDR3 1600 spd NT5CB64M16D NT5CB64M16dpcf
    Text: NT5CB128M8DN/NT5CB64M16DP 1Gb DDR3 SDRAM D-Die Preliminary Feature Table 1: CAS Latency Frequency Speed Bins -BE* -CF* -DH* -EI* DDR3-1066-CL7 (DDR3-1333-CL8) (DDR3-1600-CL10) (DDR3-1866-CL11) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.)


    Original     		NT5CB128M8DN/NT5CB64M16DP DDR3-1066-CL7) DDR3-1333-CL8) DDR3-1600-CL10) DDR3-1866-CL11) nt5cb64m16 MPR 20 20 CF RESISTOR NT5CB64M16DP-DH NT5CB64 DDR3 1600 spd NT5CB64M16D NT5CB64M16dpcf PDF

    NT5CC256

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB512M4DN NT5CB256M8DN NT5CC512M4DN NT5CC256M8DN NT5CC256 PDF

    2310 dhi

    Abstract: NT5CB64M16DP nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14
    Text: 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8 CL10 CL12 CL13 Units Min. Max.


    Original     		NT5CB128M8DN NT5CB64M16DP NT5CC128M8DN NT5CC64M16DP DDR3/L-1066 1600Mbps. 1600Mbps DDR3-1866 DDR3-1866 2310 dhi nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14 PDF

    NT5CB64M16DP

    Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units


    Original     		NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066-CL7) DDR3/L-1333-CL8) DDR3/L-1600-CL10) DDR3-1866-CL11) NT5CB64M16DP nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m PDF

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM D-Die NT5CB512M4DN / NT5CB256M8DN NT5CC512M4DN / NT5CC256M8DN Feature  1.5V ± 0.075V / 1.35V +0.0675V/-0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB512M4DN NT5CB256M8DN NT5CC512M4DN NT5CC256M8DN 675V/-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB512M4BN NT5CB256M8BN NT5CB128M16BP NT5CC512M4BN NT5CC256M8BN NT5CC128M16BP 78-Ball PDF

    NT5CB64M16DP

    Abstract: nt5cb64m16 NT5CB64M16DP-DH NT5CB128M8DN-CFI NT5CC64M16DP NT5C NT5CC128M8DN DDR3 pin out NT5CB64M16D NT5CB64
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8


    Original     		NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066 NT5CB64M16DP nt5cb64m16 NT5CB64M16DP-DH NT5CB128M8DN-CFI NT5CC64M16DP NT5C NT5CC128M8DN DDR3 pin out NT5CB64M16D NT5CB64 PDF

    NT5CB256

    Abstract: srt 8n JESD79-3 NT5CB128M8CN NT5CB128M8CN-CG NT5CB128M TI ddr3 controller datasheet NT5CB128
    Text: 1Gb DDR3 SDRAM C-Die NT5CB256M4CN / NT5CB128M8CN Feature  1.5V ± 0.075V JEDEC Standard Power Supply  Write Leveling  8 Internal memory banks (BA0- BA2)  OCD Calibration  Differential clock input (CK, )  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		NT5CB256M4CN NT5CB128M8CN 78-Ball NT5CB256 srt 8n JESD79-3 NT5CB128M8CN NT5CB128M8CN-CG NT5CB128M TI ddr3 controller datasheet NT5CB128 PDF

    N2CB2G40DN

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM D-Die N2CB2G40DN / N2CB2G80DN N2CC2G40DN / N2CC2G80DN Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.1V JEDEC Standard Power Supply  Output Driver Impedance Control  Write Leveling  OCD Calibration  Dynamic ODT (Rtt_Nom & Rtt_WR)


    Original     		N2CB2G40DN N2CB2G80DN N2CC2G40DN N2CC2G80DN 78Balls PDF