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    MPS6566 TRANSISTOR Search Results

    MPS6566 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MPS6566 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MPS6519

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device b v c eo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20CURRENT MPS656E MPS6519 MPSA20 PDF

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


    OCR Scan     		DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392 PDF

    TIS90

    Abstract: MPS6566 TIS97
    Text: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100


    OCR Scan     		bS01130 D03777M PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 MPS6566 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n4494

    Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
    Text: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495


    OCR Scan     		T-27-Ã 2N3707 MPS3707 100nA 100/iA 2N3708 MPS3708 2N3709 MPS3709 2n4494 MPS3711 2N4495 PN2218 2N3711 PDF

    2N3638

    Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW


    OCR Scan     		2N4969 2N3641 2N4436 EN697 MPSA10 MPSA20 2N3904 2N3903 EN3903 MPS6531 2N3638 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. MPS6521 ^CBO (V) Min ^CEO (V) Min ^EBO (V) Min 40 25 4 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°c 0.625 0.1 'cBO m ^CB (V) Max 0.05 'c e s (|iA)


    OCR Scan     		MPS6521 MPS6530 MPS6539 MPS6540 MPS6541 MPS6575 MPS6576 MPS706 MPS6574 MPS8098 PDF

    to-92-3

    Abstract: MPS6547 MPS6521 MPS6530 MPS6531 MPS6532 MPS6539 MPS6540 MPS6541 MPS6542
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Vcbo VcEO Vebo Pd 'c M (V) (V) (W) (A) Min Min Min @Tc=25°( 'cBO v CB 'ces ^CE '’Ft 0 'c & VCE (mA) IV) (PA) (V) IMA) © (V)


    OCR Scan     		MPS6521 MPS6530 MPS6531 MPS6532 O-92-3 MPS6570 MPS6571 MPS6573 MPS6574 to-92-3 MPS6547 MPS6539 MPS6540 MPS6541 MPS6542 PDF

    2N2210

    Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
    Text: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300


    OCR Scan     		bS01130 D037774 PN5816 TIS90 TIS92 TIS97 TN2218A O-237 TN2219A 2N2210 transistor 2N2210 2N3827 PN3694 2N2270 2N2586 2N5962 PDF

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPS6534 MPSA20 MPSA55 PDF

    MPS6548

    Abstract: MPS6547 MPS6574 MPS6521 MPS6530 MPS6531 MPS6532 MPS6539 MPS6540 MPS6541
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°c 'cBO ^CB ' c es ^CE @ (V) (N Max (V) hFE ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min MPS6521 40 25 4 0.625


    OCR Scan     		MPS6521 MPS6530 MPS6531 MPS6532 O-92-3 MPS6571 MPS6573 MPS6574 MPS6575 MPS6576 MPS6548 MPS6547 MPS6574 MPS6539 MPS6540 MPS6541 PDF

    n3906

    Abstract: MPS2484 MPS6566 MPS6566 transistor 2N5086 2N5087 2N5209 2N5210 BC550P BC560P
    Text: NPN LOW NOISE TABLE 5 - NPN SILICON PLANAR LOW NOISE TRANSISTORS The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage VCE0 ,


    OCR Scan     		BCY65EP MPS2484 30-15k BCY77P 2N5209 2N5210 ZTX331 BC550P n3906 MPS6566 MPS6566 transistor 2N5086 2N5087 BC560P PDF

    Untitled

    Abstract: No abstract text available
    Text: I Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LÈAD CODE v CBO v CBO v CEO v EBO 'CBO (V) (V) (V) a v CE @ <c h F:E (V) (V) *CES (mA) VC E (S /IT) 'C (V) (mA) *hfe(1kHZ) MIN *VCES MIN MIN *ICEV MIN MAX Cob (pF) *C ,b MAX h NF


    OCR Scan     		MPS3710 MPS3711 MPS3721 MPSA18 MPSA20 PDF

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SPRA GU E. T3 D • OSD433Ö □□□35^1 h ■ ALGR S E M I C O N D S / ICS D 93 D 03591 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain


    OCR Scan     		OSD433Ö MPS3721 MPS3826 MPS3827 MPS5127 MPS5131 MPS5132 MPS5133 MPS5135 MPS5136 PDF

    Untitled

    Abstract: No abstract text available
    Text: Small signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE v CBO v CEO v EBO •CBO v CBO (V) 00 (V) MIN *VCES MIN MIN *'CEV (nA) 0 V CE h F•6 00 00 *CES ® ic <mA) 00 <mA> *hfc<1kHZ) MIN MAX (pF) *Crb MAX MPS3710 NPN LOW NOISE


    OCR Scan     		PDF

    MPS6566

    Abstract: MPS3710 MPS3711 MPS3721 MPS3826 MPS3827 MPS5172 MPS5306 MPS5308 MPS6507
    Text: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE (V) (V) ICBO @ (nA) VCB (V) 20 MIN 90 MAX 330 MAX 6.0 *ICES *ICEV MAX 100 hFE @ VCE @ IC VCE (SAT) @ IC *hFE (1kHZ) (V) (mA) (V) (mA) Cob fT NF toff MPS3710 NPN LOW NOISE


    Original     		MPS3710 MPS3711 MPS3721 MPS3826 MPSA14 MPSA18 MPSA20 MPS6566 MPS3710 MPS3711 MPS3721 MPS3826 MPS3827 MPS5172 MPS5306 MPS5308 MPS6507 PDF

    sprague MPSA05

    Abstract: No abstract text available
    Text: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60


    OCR Scan     		flS13flS0 MPS3721 MPS3826 MPS3827 MPS5127 MPS5131 MPS5132 MPS5133 O-226AA/STYLE sprague MPSA05 PDF

    BC557P

    Abstract: ZTX212 ZTX452 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
    Text: NPN GENERAL PURPOSE T A B LE 1 - NPN SILIC O N PLA N A R G E N E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


    OCR Scan     		ZTX453 ZTX452 ZTX537 BC337P BC327P ZTX338 ZTX538 BC338P BC328P MPSA56 BC557P ZTX212 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06 PDF

    MPS5308

    Abstract: CRB 1.0 m MPSA18 MPS3710 MPS3711 MPS3721 MPS3826 MPS3827 MPS5172 MPS5306
    Text: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE (V) VCB (V) 20 MIN 90 MAX 330 MAX 6.0 *ICES *ICEV MAX 100 hFE @ VCE @ IC VCE (SAT) @ IC *hFE (1kHZ) (V) (mA) (V) (mA) Cob fT NF toff MPS3710 NPN LOW NOISE EBC MIN


    Original     		MPS3710 MPS3711 MPS3721 MPS3826 MPSA14 MPSA18 MPSA20 MPS5308 CRB 1.0 m MPSA18 MPS3710 MPS3711 MPS3721 MPS3826 MPS3827 MPS5172 MPS5306 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type ^cso (V) Min No. MPS3904 60 VCEO ^EBO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (V) Min (V) P» (W) Min @Tc=25°c 40 6 0:625 (A) !cbo (ma) Max Vcb (V ) 0.2 'ces (pA) Max


    OCR Scan     		MPS3904 PDF

    TP2222

    Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
    Text: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO


    OCR Scan     		MPS6515 MPS6516 MPS6517 MPS6518 MPS6519 MPS6520 TP2483 TP2484 TP4384 TP4386 TP2222 TP2222A TP2907A TP3116 MPS6566 PDF

    MPS6566

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA2034 MPS6532 MPS6566 MPSA20 PDF

    2N3904

    Abstract: BC557P BFS98 ZTX452 BFS60 ZTX304 BFS59 MPS6566 ZTX3904 ZTX453
    Text: NPN GENERAL PURPOSE TABLE 1 - NPN SILICON PLANAR GENERAL PURPOSE: TRANSISTORS The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


    OCR Scan     		ZTX453 ZTX452 ZTX537 BC337P BC327P ZTX338 ZTX538 BC338P BC328P MPSA56 2N3904 BC557P BFS98 BFS60 ZTX304 BFS59 MPS6566 ZTX3904 PDF

    D38L1-3

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50


    OCR Scan     		GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 D38L1-3 MPSA20 PDF