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    MPS855 Price and Stock

    KEC MPS8550S-D-RTK/P

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    Win Source Electronics MPS8550S-D-RTK/P 476,084
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    MPS855 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MPS855 National Semiconductor PNP Medium Power Scan PDF
    MPS8550 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    MPS8550 National Semiconductor PNP General Purpose Amplifier Original PDF
    MPS8550 National Semiconductor PNP General Purpose Amplifier Original PDF
    MPS8550 National Semiconductor PNP General Purpose Amplifier Original PDF
    MPS8550 Fairchild Semiconductor PNP General Purpose Amplifier Scan PDF
    MPS8550 Korea Electronics General Purpose Transistor Scan PDF
    MPS8550 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MPS8550S Korea Electronics General Purpose Transistor Original PDF

    MPS855 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MPS8550

    Abstract: No abstract text available
    Text: MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original
    MPS8550 MPS8550 PDF

    MPS8050

    Abstract: MPS8550
    Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8050. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V VEBO -6 V Collector Current


    Original
    MPS8550 MPS8050. MPS8050 MPS8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8050. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO


    Original
    MPS8550 MPS8050. 625mW 400mW -100mA -800mA -800mA, -80mA PDF

    CBVK741B019

    Abstract: F63TNR MPS8550 PN2222N
    Text: MPS8550 MPS8550 C B TO-92 E PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original
    MPS8550 CBVK741B019 F63TNR MPS8550 PN2222N PDF

    mps8050

    Abstract: MPS8550
    Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8550. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V VEBO 6 V Collector Current


    Original
    MPS8050 MPS8550. mps8050 MPS8550 PDF

    mps8050

    Abstract: MPS8550
    Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8550. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V H


    Original
    MPS8050 MPS8550. 100mA 800mA 800mA, mps8050 MPS8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE 2009. 6. 10 Revision No : 2 1/2


    Original
    MPS8550S PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B FEATURE C A ・Complementary to MPS8050. N K MAXIMUM RATING Ta=25℃ E G RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage


    Original
    MPS8050. MPS8550 625mW 400mW PDF

    MPS8050

    Abstract: MPS8550
    Text: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8050. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V


    Original
    MPS8550 MPS8050. -100mA -800mA -800mA, -80mA -10mA -50mA MPS8050 MPS8550 PDF

    k MPS 8550 D

    Abstract: K 8550 MPS 8550 B kmps8550 k MPS 8550 8550B MPS 8550 C MPS 8550 D KEC 8550 DSA0010574
    Text: SEMICONDUCTOR MPS8550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8550 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8550 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.


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    MPS8550 k MPS 8550 D K 8550 MPS 8550 B kmps8550 k MPS 8550 8550B MPS 8550 C MPS 8550 D KEC 8550 DSA0010574 PDF

    MPS8050S

    Abstract: MPS8550S
    Text: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to MPS8550S. L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 1.5


    Original
    MPS8050S MPS8550S. MPS8050S MPS8550S PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L D L ・Complementary to MPS8550S. H MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage


    Original
    MPS8050S MPS8550S. PDF

    MPS8550

    Abstract: MPS8550c
    Text: MPS8550 MPS8550 C B TO-92 E PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original
    MPS8550 MPS8550 MPS8550c PDF

    MPS8550

    Abstract: No abstract text available
    Text: MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original
    MPS8550 tempe15 MPS8550 PDF

    MPS8550S

    Abstract: MPS8050S
    Text: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L L D ・Complementary to MPS8050S. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage


    Original
    MPS8550S MPS8050S. MPS8550S MPS8050S PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8550. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO


    Original
    MPS8050 MPS8550. 625mW 400mW 100mA 800mA 800mA, PDF

    MPS8550

    Abstract: pnp general purpose amplifier
    Text: N MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original
    MPS8550 MPS8550 pnp general purpose amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: B iy C P N D U C T g R n.i MPS8550 PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Rdtinys T A = 2 5 ° C unless o th e rw ise noted


    OCR Scan
    MPS8550 PDF

    MPS8550

    Abstract: MPS8050
    Text: SEMICONDUCTOR TECHNICAL DATA MPS8550 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8050. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage VCEO


    OCR Scan
    MPS8550 MPS8050. -30-100-300-1K MPS8550 MPS8050 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP Transistors National f i seniconäuc, or- V V Device No. Case Style MPS855 CBO V CEO EBO Discrete POWER & Signal Technologies PNP Medium Power 'cB O V V CE SAT V BE(SAT) h FE (V) Min (V) Min (V) Min TO-92 (92) 40 25 6 MPS6562 TO-92 (92) 25 25 5 100 20


    OCR Scan
    MPS855 MPS6562 PN4356 TN4033A O-226 TN5322A MPSA55 MPSA56 PDF

    MPS8550

    Abstract: I400 E100
    Text: Semi conduct or MPS8550 D iscrete P O W E R & S ig n a l Technologies National MPS8550 PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at coilector currents to 500 mA. Sourced from Process 60. Absolute Maximum RstinCJS*


    OCR Scan
    MPS8550 MPS8550 I400 E100 PDF

    Untitled

    Abstract: No abstract text available
    Text: D iscrete POWER & Signal Technologies 1R O H I 1ILtQI ^ M IC W J C R J C T D P i m MPS8550 C TO-92 BE PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier appli cations at collector currents to 500 mA. Sourced from Process 60.


    OCR Scan
    MPS8550 PDF

    MPS8050

    Abstract: MPS8550
    Text: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8550. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Em itter-B ase Voltage


    OCR Scan
    MPS8050 MPS8550. MPS8050 MPS8550 PDF

    MPS6562

    Abstract: MPS855 MPSA55 MPSA56 PN4355 PN4356 TN4033A TN5322A
    Text: This PNP Transistors Material . /% Discrete POW ER & Signal Technologies National I* P N P Copyrighted VCBO VCEO ^EBO ’cBO V < nA @ ^ V) (V) (V) Min Min Min Max ' ' Device No. Case Style MPS855 TO-92 (92) 40 MPS6562 TO-92 (92) 25 25 5 100 20 50 50 35 PN4355


    OCR Scan
    MPS855 MPS6562 PN4355 PN4356 TN4033A O-226 TN5322A MPSA55 MPSA56 PDF