UNELCO MICA CAPACITORS
Abstract: "RF MOSFET" vk200 choke 2204B J101 MRF150 VK200
Text: Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
UNELCO MICA CAPACITORS
"RF MOSFET"
vk200 choke
2204B
J101
MRF150
VK200
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mrf150
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MRF150/D*
mrf150
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MOTOROLA circuit for mrf150
Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MOTOROLA circuit for mrf150
motorola MRF150
mrf150 equivalent
arco capacitors
choke vk200
vk200 choke
MRF150
"RF MOSFET"
VK200-4B
2204B
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MOTOROLA circuit for mrf150
Abstract: mrf150 motorola MRF150 mrf150 equivalent DIODE MOTOROLA B34 B34 motorola diode 910 b34 vk200 choke 2204B J101
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
to150
MOTOROLA circuit for mrf150
mrf150
motorola MRF150
mrf150 equivalent
DIODE MOTOROLA B34
B34 motorola
diode 910 b34
vk200 choke
2204B
J101
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MOTOROLA circuit for mrf150
Abstract: MRF150 2204B J101 VK200 169 MHz RF CHIP 18AWG Nippon capacitors
Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150/D
MRF150
MOTOROLA circuit for mrf150
MRF150
2204B
J101
VK200
169 MHz RF CHIP
18AWG
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150
MRF150
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Untitled
Abstract: No abstract text available
Text: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
VRF150MP
150MHz
VRF150
150MHz,
30MHz,
MRF150
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VRF150
Abstract: J101 0-12V 2204B MRF150 VK200-4B Transistor C2
Text: VRF150 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
150MHz
VRF150
150MHz,
30MHz,
MRF150
J101
0-12V
2204B
MRF150
VK200-4B
Transistor C2
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Untitled
Abstract: No abstract text available
Text: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
VRF150MP
150MHz
VRF150
150MHz,
30MHz,
MRF150
Availa96
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vrf150
Abstract: MRF150
Text: VRF150 G VRF150MP(G) 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
VRF150MP
150MHz
150MHz,
30MHz,
MRF150
MRF150
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VRF150
Abstract: 0-12V 2204B MRF150 VRF150MP
Text: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
VRF150MP
150MHz
VRF150
150MHz,
30MHz,
MRF150
Maxim096
0-12V
2204B
MRF150
VRF150MP
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transformer 220-12
Abstract: vrf150 VRF150FL
Text: VRF150FL VRF150FLMP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150FL
VRF150FLMP
150MHz
VRF150
150MHz,
30MHz,
MRF150
com/micnotes/1818
transformer 220-12
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Untitled
Abstract: No abstract text available
Text: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
VRF150MP
150MHz
VRF150
150MHz,
30MHz,
MRF150
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Untitled
Abstract: No abstract text available
Text: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
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VRF150
VRF150MP
150MHz
VRF150
150MHz,
30MHz,
MRF150
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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MRF9742
Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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MHW1184L
MHW1224L
MHW1254L
MHW1304L
MRF9742
MOTOROLA MASTER SELECTION GUIDE RF
MHW591
MHW704
mhw593
MHW707-2
MHW592
MRF947T1 equivalent
MHW707-1
MRF9282T1
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MOTOROLA circuit for mrf150
Abstract: MRF150 mrf150 equivalent UNELCO MICA CAPACITORS
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150
MRF150
MOTOROLA circuit for mrf150
mrf150 equivalent
UNELCO MICA CAPACITORS
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MOTOROLA circuit for mrf150
Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF150
MRF150
MOTOROLA circuit for mrf150
UNELCO MICA CAPACITORS
motorola MRF150
mrf150 equivalent
Unelco J101
BH Rf transistor
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motorola MRF150
Abstract: MOTOROLA circuit for mrf150 Nippon capacitors
Text: MOTOROLA O rder this docum ent by M RF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ie ld -E ffe c t Transistor N-Channel Enhancement-Mode MRF150 Designed prim arily fo r linear la rg e -sig n a l output stages up to 150 MHz frequency range.
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RF150/D
MRF150
motorola MRF150
MOTOROLA circuit for mrf150
Nippon capacitors
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MOTOROLA circuit for mrf150
Abstract: motorola MRF150 SU 179 Motorola 0936 mrf150 equivalent MRF150 2204B J101 VK200-4B mrf1507
Text: MOTOROLA O rder this docum ent by M RF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ie ld -E ffe c t Transistor N-Channel Enhancement-Mode MRF150 D esigned prim arily for linear la rg e -sig n a l output stages up to 150 MHz frequency range.
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MRF150/D
MRF150
MOTOROLA circuit for mrf150
motorola MRF150
SU 179
Motorola 0936
mrf150 equivalent
MRF150
2204B
J101
VK200-4B
mrf1507
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D913
Abstract: UNELCO MICA CAPACITORS VK200
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F150 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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RF150
D913
UNELCO MICA CAPACITORS
VK200
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transistor d 2389
Abstract: MRF150
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F M OSFET Line 150 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -1 7 5 M H z N-CHANNEL MOS LINEAR RF POWER . . . d e s ig n e d p r im a r ily fo r li n e a r la rg e -s i g n a l o u t p u t sta ge s in th e
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode D e s ig n e d p rim a rily fo r lin e a r la rg e -s ig n a l o u tp u t s ta g e s u p to 150 M H z fre q u e n c y range. • S p e cifie d 5 0 Volts, 30 M H z C h a ra cte ristics
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MRF150
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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