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    MRF151G Search Results

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    MRF151G Price and Stock

    MACOM MRF151G

    RF MOSFET 50V 375-04
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF151G Tray 20
    • 1 -
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    • 100 $157.6625
    • 1000 $157.6625
    • 10000 $157.6625
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    Mouser Electronics MRF151G
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    Verical MRF151G 116 1
    • 1 $134.2
    • 10 $134.2
    • 100 $134.2
    • 1000 $134.2
    • 10000 $134.2
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    Richardson RFPD MRF151G 116 1
    • 1 $134.2
    • 10 $127.5
    • 100 $127.5
    • 1000 $127.5
    • 10000 $127.5
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    Win Source Electronics MRF151G 300
    • 1 $120.8334
    • 10 $104.7222
    • 100 $104.7222
    • 1000 $104.7222
    • 10000 $104.7222
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    MACOM MRF151GMP

    RF POWER TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD MRF151GMP 1
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    MRF151G Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF151G Advanced Semiconductor Transistor Original PDF
    MRF151G M/A-COM 300 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF151G Motorola MRF151G RF Power Transistor Original PDF
    MRF151G Motorola N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
    MRF151G NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
    MRF151G Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF151G Unknown FET Data Book Scan PDF

    MRF151G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MRF151G

    Abstract: MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors
    Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF151G/D MRF151G MRF151G/D* MRF151G MRF151G hf amplifier MRF151G Voltage min-max AN211A motorola bipolar transistor data manual mosfet HF amplifier mrf151g 300 NIPPON CAPACITORS DC bias of FET arco capacitors PDF

    MRF255 equivalent

    Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
    Text: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341


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    MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 MRF255 equivalent motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255 PDF

    MRF151G

    Abstract: mrf151g 300 mosfet m
    Text: MRF151G Part Status: Released RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features M/A-COM Products RoHS Compliant Package Outline Guaranteed Performance at 175 MHz, 50 V: • • • • • • Output Power — 300 W


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    MRF151G MRF151G mrf151g 300 mosfet m PDF

    mrf151g 300

    Abstract: MRF151G
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF151G mrf151g 300 MRF151G PDF

    MRF151G hf amplifier

    Abstract: MRF151G Nippon capacitors
    Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF151G/D MRF151G MRF151G/D MRF151G hf amplifier Nippon capacitors PDF

    MRF151G

    Abstract: mrf151g 300 1202 transistor
    Text: MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS


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    MRF151G MRF151G mrf151g 300 1202 transistor PDF

    MRF151G

    Abstract: MRF151G hf amplifier motorola MOSFET 935 0948 power fet motorola AN211A mrf151g 300 AN211A rf amplifier circuit mrf151g Nippon capacitors
    Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF151G/D MRF151G MRF151G MRF151G hf amplifier motorola MOSFET 935 0948 power fet motorola AN211A mrf151g 300 AN211A rf amplifier circuit mrf151g Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF151G/D MRF151G MRF151G/D* PDF

    MRF151G hf amplifier

    Abstract: MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g
    Text: Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    MRF151G/D MRF151G MRF151G hf amplifier MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    MRF151G

    Abstract: VRF151G 2204B
    Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast


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    VRF151G 175MHz VRF151G 175MHz. 175MHz, MRF151G MRF151G 2204B PDF

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


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    714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861 PDF

    MRF156

    Abstract: AN-1041 Granberg AN1041 mrf151g 300 mrf155 AN1041/D MRF153 MRF154 MRF141G
    Text: Order this document by AN1041/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1041 MOUNTING PROCEDURES FOR VERY HIGH POWER RF TRANSISTORS Prepared by: Helge O. Granberg RF Engineering Advanced Products Group RF power semiconductors such as MRF153, MRF154, MRF155, MRF156 and MRF430 are housed in Case 368-01,


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    AN1041/D AN1041 MRF153, MRF154, MRF155, MRF156 MRF430 MRF141G, MRF151G, MRF175G AN-1041 Granberg AN1041 mrf151g 300 mrf155 AN1041/D MRF153 MRF154 MRF141G PDF

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


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    AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit PDF

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


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    2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent PDF

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


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    2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470 PDF

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


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    DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index PDF

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


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    Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


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    RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode PDF

    MRF151G

    Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151G The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan
    MRF151G MRF151G MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations PDF

    MRF151G

    Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
    Text: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan
    RF151G/D MRF151G L8776 Nippon capacitors rf amplifier circuit mrf151g PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan
    2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan
    PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 PDF

    MFQ960C

    Abstract: MLPI MPF6860 MPM3002 mrf151g 300 MFQ930C MFQ990C MGM20N45 MGM20N50 MGP20N45
    Text: 277 - tt f M. A 1- Vd s or € * £ Vg s W. t S T a = 2 5 cC Ig s s Pd Id loss th) F Ds(on) Vd s * ‘ 14 (Ta=25°C) b(on) Ciss g fs Coss Crss * /CH * /CH Vg s (V) (A) <nA) CW) min max (V) (V) (V) (V) (UA) (*typ) (max) Id OnA) Vd s ft B m % V g s =0 Vg s


    OCR Scan
    MFQ930C MFQ960C MFQ990C MGM20N45 CASE375-01 MRF157 CASE368-02 MRF158 CASE305A-01 MRF158R MLPI MPF6860 MPM3002 mrf151g 300 MGM20N50 MGP20N45 PDF