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Motorola Semiconductor Products MRF21125S TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR
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MRF21125S Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
MRF21125S	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF21125S	Motorola	RF POWER FIELD EFFECT TRANSISTORS	Original	PDF
MRF21125S	Motorola	RF Power Field Effect Transistors	Scan	PDF
MRF21125SR3	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF
MRF21125SR3	Freescale Semiconductor	2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFET	Original	PDF
MRF21125SR3	Motorola	RF Power Field Effect Transistor	Original	PDF
MRF21125SR3	Motorola	RF POWER FIELD EFFECT TRANSISTORS	Original	PDF

MRF21125S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF21125R3 MRF21125SR3	PDF
k 1225 data Abstract: mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125 MRF21125S Text: MOTOROLA O rder this docum ent by M RF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W -C D M A base station applications at frequencies from 2110	OCR Scan	MRF21125/D 465C-01 MRF21125S) MRF21125 MRF21125S k 1225 data mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125S	PDF
transistor motorola 236 Abstract: 465B MRF21125 MRF21125S MRF21125SR3 j686 Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21125/D MRF21125 MRF21125S MRF21125SR3 MRF21125 MRF21125S transistor motorola 236 465B MRF21125SR3 j686	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21125/D MRF21125 MRF21125S MRF21125/D	PDF
100B104JCA50X Abstract: 465B MRF21125 MRF21125R3 MRF21125SR3 j686 Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3 100B104JCA50X 465B MRF21125 MRF21125SR3 j686	PDF
MRF21125 Abstract: 465B MRF21125S Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21125/D MRF21125 MRF21125S MRF21125 465B MRF21125S	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF21125/D MRF21125R3 MRF21125SR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3	PDF
j686 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21125/D MRF21125 MRF21125S j686	PDF
MRF21125R3 Abstract: MRF21125SR3 465B MRF21125 Text: Freescale Semiconductor Technical Data Document Number: MRF21125 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF21125 MRF21125R3 MRF21125SR3 MRF21125R3 MRF21125SR3 465B MRF21125	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21125/D MRF21125 MRF21125S	PDF
j686 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n c l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF21125 MRF21125S j686	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21125/D MRF21125 MRF21125S	PDF
465B Abstract: AN1955 MRF21125 MRF21125R3 MRF21125SR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21125R3 MRF21125SR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF21125/D MRF21125R3 MRF21125SR3 MRF21125R3 465B AN1955 MRF21125 MRF21125SR3	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF21125 Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF21125 MRF21125R3 MRF21125SR3	PDF
n channel MOSFET 45 w 10 v Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21125S MRF21125SR3 MRF21125 n channel MOSFET 45 w 10 v	PDF
j686 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	dB110 MRF21125 MRF21125S MRF21125SR3 j686	PDF
BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Text: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23	PDF
PN channel MOSFET 10A Abstract: Cree Microwave UGF21125 Text: UGF21125 125W, 2.17GHz, 28V, Broadband RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for W-CDMA, TDMA, CDMA, GSM single and Multi-Carrier power amplifiers in	Original	UGF21125 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21125 PN channel MOSFET 10A Cree Microwave	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21125 RDMRF21125WCDMA	PDF
stripline directional couplers Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,	Original	SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1	PDF
TRANSISTOR REPLACEMENT GUIDE Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station	Original	SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
very simple walkie talkie circuit diagram Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23	PDF

MRF21125S Search Results

MRF21125S Price and Stock

Motorola Semiconductor Products MRF21125S

MRF21125S Datasheets (7)

MRF21125S Datasheets Context Search

Untitled

k 1225 data

transistor motorola 236

Untitled

100B104JCA50X

MRF21125

Untitled

Untitled

j686

MRF21125R3

Untitled

j686

Untitled

465B

Untitled

n channel MOSFET 45 w 10 v

j686

BFG591 amplifier

PN channel MOSFET 10A

Untitled

stripline directional couplers

TRANSISTOR REPLACEMENT GUIDE

2a258 transistor

very simple walkie talkie circuit diagram