Z1 Transistor
Abstract: MRF392
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392/D*
Z1 Transistor
MRF392
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MRF392
Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392/D*
MRF392
TRANSISTOR Z4
3142 equivalent
J044
Z1 Transistor 6 pin
transistor Z6
Z6 82
mini cap
744A-01
LX125
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392/D*
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TRANSISTOR Z4
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
MRF392
TRANSISTOR Z4
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MRF648
Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Text: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137
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2N5944
SD1134
MRF859
SD1423
2N5945
2N5946
2N6082
2N6084
2N6439
MHW912
MRF648
TPV3100
TPV-3100
TP9383
SD1393
MRF238 MOTOROLA
MRF188
TP9380
mrf10500
mrf422
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MRF181SR1
Abstract: No abstract text available
Text: Section Two Motorola RF Discrete Transistors – Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–258
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MRF134
MRF136
MRF141
MRF141G
MRF148A
MRF150
MRF151
MRF21090
MRF21090S
MRF21120
MRF181SR1
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bf223
Abstract: PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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BSW43
BSX52
MMBT41o-X
O-92var
O-23S
O-10S
O-20SM
O-23Svar
bf223
PE210C
BF311
PE210B
2SC1293
bfy88
BF330
nec RF package SOT89
2SC1260
BF497
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2N5944
2N5945
2N5946
2N6082
2N6084
2N6439
2SC1257
2SC1258
2SC1259
2SC1605A
MRF648
TPV3100
2SC2897
macom
TP3034
SD1393
TP3008
tp9383
transistor 2sC636
MRF255 equivalent
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MRF472
Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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BSW43
BSX52
MMBT41ran
MRF472
MRF245
MRF243
MPSA13K
MPS6579
MRF420
BF497
MRF304
MRF250
PE210B
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SIT Static Induction Transistor
Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are
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AN1529/D
AN1529
AN1529/D*
SIT Static Induction Transistor
create uhf vhf tv matching transformer
AR165S
Granberg
AR-165S
power bjt advantages and disadvantages
all mosfet vhf power amplifier narrow band
rf POWER BJTs
mrf154 amplifier
bjt ce amplifier
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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MRF9742
Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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MHW1184L
MHW1224L
MHW1254L
MHW1304L
MRF9742
MOTOROLA MASTER SELECTION GUIDE RF
MHW591
MHW704
mhw593
MHW707-2
MHW592
MRF947T1 equivalent
MHW707-1
MRF9282T1
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MHW6181
Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
Text: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1
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SPSSG1009/D
MBC13720,
MBC13916
MRF1535T1,
MRF1550T1
MRF373A,
MRF373AS,
MRF374A,
MRF372
MRF9002R1,
MHW6181
MRF151G
MRF9135LS
MRF455 APPLICATION NOTES
amplifier mrf247
MRF247
MRF171A
MRF21180
MRF374A
MRF428
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EB202
Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF
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SG46/D
EB202
AR305
"Good RF Construction Practices and Techniques"
transistors EB202
MOTOROLA circuit for mrf150
AN749
ford eec V
ar164
TRANSISTOR C 6090 lg
AN762 RF AMPLIFIER
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TPV3100
Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE
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twF150-50F
HF150-50S
HF250-50
HF100-28
HF220-28
HF220-50
TVU014
HF75-50S
ASAT25
ASI4003
TPV3100
TP3024A
HF power amplifier TPV3100
PT9783
MRF466
mrf4070
tp9383
tp2304
mrf433
MRF492A
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transistor c 2335
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power TVansistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. 125 W, 30 to 500 MHz CONTROLLED "Q”
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MRF392
MRF392
transistor c 2335
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equivalent transistor rf "30 mhz"
Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
equivalent transistor rf "30 mhz"
NPN TRANSISTOR Z4
lx125
motorola rf Power Transistor
mrf392 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 D esigned prim arily for w ideband larg e-sig nal output and driver am plifier stages in the 30 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
MRF392
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MRF392
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF392 The RF Line NPN Silicon Push-Pull RF Power Transistor . d e sign e d prim arily for w id e b a n d large-signal output an d driver am plifier sta ge s in the 3 0 - 5 0 0 M H z frequency range. • Specified 28 Volt, 400 M H z Characteristics —
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MRF392
MRF392
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Pow er Transistor D esigned prim arily for w ideband la rg e -sig n a l output and driver am plifier stages in the 30 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor D esigned prim arily for w ideband la rg e-sig nal output and driver am plifier stages in the 30 to 500 M H z frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
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of 76952
Abstract: 76952 MRF transistor mrf 304 M/76952
Text: motorola sc ÛT -c x s t r s / r f > 6 3 6 7 2 5 4 MOTOROLA SC X S T R S / R F »F|ti3t.7aS4 QD7fiTSB 1 89D 76952 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M RF392 The RF Line N P N S ilic o n P u sh -P u ll RF P o w e r T ra n sisto r . designed primarily for wideband large-signal output and driver amplifier stages
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RF392
44A-01
of 76952
76952
MRF transistor mrf 304
M/76952
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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