MRF5S21045NR1 Search Results

MRF5S21045NR1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF5S21045NR1		Freescale Semiconductor	RF Power Field Effect Transistors		Original	PDF
MRF5S21045NR1		Freescale Semiconductor	2170MHZ 10W TO270WB4N		Original	PDF

MRF5S21045NR1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF5S21045N Abstract: No abstract text available Text: MRF5S21045 Rev. 0, 2/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110	Original	MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045N	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S21045 MRF5S21045MBR1 MRF5S21045MR1 J591 Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S21045 MRF5S21045MBR1 J591	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF5S21045 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045NBR1 MRF5S21045NR1 Text: Document Number: MRF5S21045 Rev. 1, 7/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110	Original	MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 A114 A115 AN1955 C101 JESD22 MRF5S21045 MRF5S21045MBR1	PDF
MRF5S21045N Abstract: No abstract text available Text: Document Number: MRF5S21045 Rev. 1, 7/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110	Original	MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045 MRF5S21045N	PDF
MC9S12XDP384 Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product	Original	SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb	PDF
MMM6029 Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular	Original	SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications	PDF
MRF5S21045N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N	PDF
MRF5S21045N Abstract: No abstract text available Text: Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N	PDF