MRF6V10250HS Search Results

MRF6V10250HS Price and Stock

Filter by Manufacturer


NXP Semiconductors MRF6V10250HSR3 RF MOSFET LDMOS 50V NI780
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MRF6V10250HSR3	Reel			250	1 - 10 - 100 - 1000 $273.9412 10000 $273.9412	Buy Now

MRF6V10250HS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF6V10250HSR3		Freescale Semiconductor	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET		Original	PDF
MRF6V10250HSR5		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH NI780S		Original	PDF

MRF6V10250HS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF6V10250HSR3 C1447-0 nh TRANSISTOR Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 1, 6/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3 A114 A115 AN1955 C101 JESD22 MRF6V10250HSR3 C1447-0 nh TRANSISTOR	PDF
AN1955 Abstract: MRF6V10250HSR3 CRCW251220R NI-780S Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 NOT RECOMMENDED FOR NEW DESIGN N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3 AN1955 MRF6V10250HSR3 CRCW251220R NI-780S	PDF
ATC100B3R3 Abstract: No abstract text available Text: Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10250HSR3 LIFETIME BUY RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3 MRF6V10250HS ATC100B3R3	PDF
ATC100B4R7CT500XT Abstract: transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MRF6V10250HS MRF6V10250HSR3 ATC100B4R7CT500XT transistor j239 j239 transistor equivalent table c101 mosfet mttf A02TKLC MRF6V10250HSR3 A114 A115 AN1955	PDF
MPF102 spice model Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for	Original	te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H	PDF