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    MRF8S9170NR3 Search Results

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    MRF8S9170NR3 Price and Stock

    NXP Semiconductors MRF8S9170NR3

    RF MOSFET LDMOS 28V OM780-2
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    DigiKey MRF8S9170NR3 Reel
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    Verical MRF8S9170NR3 944 3
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    MRF8S9170NR3 169 1
    • 1 $72.21
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    Rochester Electronics MRF8S9170NR3 944 1
    • 1 $146.89
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    • 100 $138.08
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    Rochester Electronics LLC MRF8S9170NR3

    RF MOSFET LDMOS 28V NI780
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    DigiKey MRF8S9170NR3 Bulk 2
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    MRF8S9170NR3 Bulk 2
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    Freescale Semiconductor MRF8S9170NR3

    MRF8S9170 - RF Ultra High Frequency Band, N-Channel Power MOSFET
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    Rochester Electronics MRF8S9170NR3 1,750 1
    • 1 $146.89
    • 10 $146.89
    • 100 $138.08
    • 1000 $124.86
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    MRF8S9170NR3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF8S9170NR3 Freescale Semiconductor HV8 900MHZ 50W OM780-2 Original PDF

    MRF8S9170NR3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    atc100b6r2

    Abstract: KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


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    PDF MRF8S9170N MRF8S9170NR3 atc100b6r2 KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M

    J377

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original
    PDF MRF8S9170N MRF8S9170NR3 J377

    ATC100B2R0BT500X

    Abstract: atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original
    PDF MRF8S9170N MRF8S9170NR3 ATC100B2R0BT500X atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


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    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


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