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    MRF9045 Search Results

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    MRF9045 Price and Stock

    NXP Semiconductors MRF9045LR5

    RF MOSFET LDMOS 28V NI360
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MRF9045LR5 Reel 50
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    NXP Semiconductors MRF9045NR1

    RF MOSFET LDMOS 28V TO270-2
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    NXP Semiconductors MRF9045LR1

    RF MOSFET LDMOS 28V NI360
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    DigiKey MRF9045LR1 Reel 500
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    • 1000 $31.54932
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    NXP Semiconductors MRF9045LSR1

    RF MOSFET LDMOS 28V NI360
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    DigiKey MRF9045LSR1 Reel 500
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    NXP Semiconductors MRF9045LSR5

    RF MOSFET LDMOS 28V NI360
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    DigiKey MRF9045LSR5 Reel 50
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    MRF9045 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF9045 Freescale Semiconductor MRF9045LR1, MRF9045LSR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9045 Motorola MRF9045 RF Power Transistors Original PDF
    MRF9045GNR1 Freescale Semiconductor 45W 945MHZ LDMOS TO270N Original PDF
    MRF9045LR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9045LR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9045LR1 Freescale Semiconductor 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9045LR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360 Original PDF
    MRF9045LSR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9045LSR1 Freescale Semiconductor 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9045LSR1 Motorola MRF9045R1 MRF9045LSR1 945 Mhz 45 W 28V Lateral N-channel Broadband RF Power MOSFETs Original PDF
    MRF9045M Freescale Semiconductor Surface Mount Solder Attach Method for the MRF9045MR1 in the TO-270 Plastic RF Package Original PDF
    MRF9045MBR1 Freescale Semiconductor PLASTIC LDMOS RF PWR AMP Original PDF
    MRF9045MBR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9045MBR1 Motorola RF POWER FIELD EFFECT TRANSISTORS Original PDF
    MRF9045MR1 Freescale Semiconductor RF PWR LDMOS T/R Original PDF
    MRF9045MR1 Freescale Semiconductor MRF9045MR1, MRF9045MBR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9045MR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9045MR1 Motorola MRF9045MR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9045NBR1 Freescale Semiconductor 45W 1GHZ FET TO272N Original PDF
    MRF9045NR1 Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Original PDF

    MRF9045 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9045

    Abstract: MRF9045S MRF9045SR1
    Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF MRF9045/D MRF9045 MRF9045S MRF9045SR1 MRF9045 MRF9045S MRF9045SR1

    MRF9045MBR1

    Abstract: MRF9045MR1 6020G
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MBR1 6020G

    motorola MOSFET 935

    Abstract: MRF9045 MRF9045LR1 MRF9045LSR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF MRF9045/D MRF9045LR1 MRF9045LSR1 MRF9045LR1 motorola MOSFET 935 MRF9045 MRF9045LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    PDF MRF9045MR1 MRF9045NR1 MRF9045NBR1 MRF9045MBR1

    RF3-50

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1/D RF3-50

    MRF9045

    Abstract: MRF9045LR1 MRF9045LSR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    PDF MRF9045 MRF9045LR1 MRF9045LSR1 MRF9045LR1 MRF9045 MRF9045LSR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    MRF9045R1

    Abstract: MRF9045 MRF9045S MRF9045SR1 300 Volt mosfet schematic circuit
    Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF MRF9045/D MRF9045R1 MRF9045SR1 MRF9045R1 MRF9045 MRF9045S MRF9045SR1 300 Volt mosfet schematic circuit

    MRF9045LSR1

    Abstract: MRF9045LR1 EB212 MRF9045 MRF9045LS REV01
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045 Rev. 11, 9/2008 NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9045 MRF9045LR1 MRF9045LSR1 MRF9045LR1 MRF9045LSR1 EB212 MRF9045 MRF9045LS REV01

    c 945 TRANSISTOR equivalent

    Abstract: 9601 mosfet 9450 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original
    PDF MRF9045MR1 c 945 TRANSISTOR equivalent 9601 mosfet 9450 transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original
    PDF MRF9045M/D MRF9045M MRF9045MR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045 Rev. 9, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    PDF MRF9045

    360B-05

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045 Rev. 9, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    PDF MRF9045 MRF9045LR1 MRF9045LSR1 360B-05

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device


    Original
    PDF MRF9045MR1/D MRF9045MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    PDF MRF9045/D MRF9045 MRF9045S MRF9045SR1

    MRF9045N

    Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


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    PDF MRF9045N MRF9045NR1 MRF9045N 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045

    MRF9045N

    Abstract: A113 MRF9045MR1 MRF9045NBR1 MRF9045NR1 MARKING WB1 6020G
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045NR1 MRF9045NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


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    PDF MRF9045N MRF9045NR1 MRF9045NBR1 MRF9045NR1 MRF9045N A113 MRF9045MR1 MRF9045NBR1 MARKING WB1 6020G

    AN1907

    Abstract: MRF9045MR1 TO270
    Text: MOTOROLA Order this document by AN1907/D SEMICONDUCTOR APPLICATION NOTE AN1907 Surface Mount Solder Attach Method for the MRF9045MR1 in the TO-270 Plastic RF Package Prepared by: Wendi Stemmons, Jerry Mason, Rich Wetz, Tom Woods, Mahesh Shah and David Runton


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    PDF AN1907/D AN1907 MRF9045MR1 O-270 AN1907 TO270

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF9045N MRF9045NR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original
    PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB


    Original
    PDF MRF9045N MRF9045NBR1

    TO-270

    Abstract: Cu-194 AN1907 sn-pb-ag solder preform SOCKET HEAD CAP SCREWS the tom and jerry show MRF9045MR1 copper bond wire motorola MOTOROLA SEMICONDUCTOR
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1907/D AN1907 Surface Mount Solder Attach Method for the MRF9045MR1 in the TO-270 Plastic RF Package Freescale Semiconductor, Inc. Prepared by: Wendi Stemmons, Jerry Mason, Rich Wetz, Tom Woods, Mahesh Shah and David Runton


    Original
    PDF AN1907/D AN1907 MRF9045MR1 O-270 TO-270 Cu-194 AN1907 sn-pb-ag solder preform SOCKET HEAD CAP SCREWS the tom and jerry show copper bond wire motorola MOTOROLA SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original
    PDF MRF9045MR1 MRF9045NR1 MRF9045NBR1 MRF9045MBR1

    A113

    Abstract: MRF9045MBR1 MRF9045MR1
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.


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    PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1 A113 MRF9045MBR1