zener diode sz 6
Abstract: SZ-10N27 zener diode sz SZ-10NN27 iz10 Figure1 SFPZ-68 SPZ-G36
Text: 4-8 Power Zener Diode VZ V lZ = 1mA, momentary 28±3.0* PR (W) (ms) 1500 Package Axial (Body Diameter/Lead Diameter) 5 Axial(φ10.0/φ1.3) Part Number IZSM (A) Tj VDC (V) Single Rectangular (ms) (°C) Wave IR IR(H) RZ Tstg (µA) Ta VZ Temperature (Ω) (µA)
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SFPZ-68
SPZ-G36
SZ-10N27
SZ-10NN27
SZ-10
zener diode sz 6
SZ-10N27
zener diode sz
SZ-10NN27
iz10
Figure1
SFPZ-68
SPZ-G36
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Untitled
Abstract: No abstract text available
Text: DSEI 2x61 Fast Recovery Epitaxial Diodes FRED V RSM V VRRM 0-4- - H — i- 0 i o - l- H -H> i—_ _ _ » Type V 1200 Symbol 1200 Ji2dt ICC 52 700 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 500 A A TVJ = 150°C; t = 10 ms (50 Hz), sine
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OT-227
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LA3 DR2
Abstract: vn 530 sp 31 x 132 THOMSON-CSF CCD 414 LEM DIODE tsc 429 7896A
Text: TD2bô?2 00G223Ö h3^ • - TH 7896A- H _ High data rate version FULL FIELD CCD IMAGE SENSOR 1024x1024 PIXELS ■ Optimized for high data rate applications: minimum readout time = 28 ms (4 outputs).
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00G223Ö
1024x1024
000E2Sb
TH7896AVRH
7896AVR
TH7896AGRCQ
LA3 DR2
vn 530 sp 31 x 132
THOMSON-CSF CCD
414 LEM DIODE
tsc 429
7896A
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1215w
Abstract: No abstract text available
Text: OPTEK Product Bulletin OPB822S July 1996 Dual Channel Slotted Optical Switches Types OPB822S, OPB822SD - H fê S • ä g f ■^S}| ms T HH3 •4io n o .« i 390 9.91) .109 (2.77) |— ië fê S i :g h - ii S is iS :h /H ^/ 1 n ■ss— •■»to ( il.4 3 )
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OPB822S
OPB822S,
OPB822SD
OPB822S
1215w
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PDF
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Untitled
Abstract: No abstract text available
Text: SMDA05-6 SURFACE MOUNT DIODE ARRAY TRANSIENT VOLTAGE SUPPRESSOR _ Stand-off Voltage - 5.0 Volts Peak Pulse Power -1 7 5 Watts SO-8/MS-012-AA FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ,H R ñ ♦ Offers ESD protection in accordance with IEC1000-4-2
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SMDA05-6
SO-8/MS-012-AA
IEC1000-4-2
IEC801-2)
SMDA05-6
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PDF
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Untitled
Abstract: No abstract text available
Text: se MIKRO n SKiiP 21 NEB 06 - SKiiP 21 NEB 06 I Absolute Maximum Ratings S ym bol [C o n d itio n s 11 Values Units 600 ±20 2 0 /1 4 4 0 /2 8 2 5 /1 5 5 0 /3 0 V Inverter & Chopper Vces Vges T h eatsink = 25 / 80 °C lc tp < 1 ms; T h eatsink —25 / 80 °C
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fll3bb71
Q004333
813bb71
0G0M334
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PDF
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D671
Abstract: d676 D-673 D674
Text: Bulletin 12071/A International S Rectifier sd263C.ssol s e rie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 4 .5 ms re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 4 5 0 0 V
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OCR Scan
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12071/A
sd263C.
16-Frequency
15DCV
D-677
D671
d676
D-673
D674
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 Z S 4 0 Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)
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MG200Q1ZS40
MG200
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)
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MG100Q1ZS40
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PDF
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diode t87
Abstract: No abstract text available
Text: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.
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1SS245
DO-35)
52mmte
T-80A
diode t87
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PDF
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Untitled
Abstract: No abstract text available
Text: 4'-.k SLOTTED OPTICAL SWITCH MS üPTOELECTflflNICS _ H21B4/5/6 PACKAGE DIMENSIONS I SYMBOL - 0 1 - MILLIMETERS - i° a h ~ibir L A A, A 2 y 3 " t = S E C T IO N X - X f LEAD PR O FILE ST1339-01 <k> bi D
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H21B4/5/6
ST1339-01
H21B4,
H21B5,
H21B6
H21B6
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PDF
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Thomson-CSF ceramic capacitor
Abstract: THOMSON-CSF electrolytic IP4T TH7896M-
Text: O THOMSON-CSF sem iconducteurs specifiques TH7896M- H High data rate version FULL FIELD CCD IMAGE SENSOR 1024 x 1024 PIXELS • Optimized for high data rate applications : minimum readout time = 28 ms (4 out puts). - Image zone : 19.45 x 19.45 mm. - Pixel : 19 x 19 (im photomos with 100 %
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TH7896M-
DSTH7896M-
Thomson-CSF ceramic capacitor
THOMSON-CSF electrolytic
IP4T
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PDF
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090Q
Abstract: AN9321 HUF76407DK8 HUF76407DK8T MS-012AA TB334 BCW25
Text: in ter« ! HUF76407DK8 D ata S h e e t O c t o b e r 199 9 F ile N u m b e r 4 7 1 2 .4 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.0900, VGS = 10V BRANDING DASH
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HUF76407DK8
MS-012AA
105aVGS
HUF73
43D2S71
01Q3TSD
090Q
AN9321
HUF76407DK8
HUF76407DK8T
TB334
BCW25
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PDF
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Untitled
Abstract: No abstract text available
Text: b l E ]> • ^24^ M ITS U B IS H I 2^ D D I MS ?* ! DISCRETE ■ MI T S 017 MITSUBISHI LASER DIODES ML4XX19 SERIES SC FOR OPTICAL COMMUNICATION SYSTEMS TYPE NAME DESCRIPTION FEATURES M L 4 X X 1 9 is an AIGaAs semiconductor laser which • Low droop provides a stable, single transverse mode oscillation
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ML4XX19
780nm
ML44119N/
ML44119R
L44119N
L44119R
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG200Q1ZS40 MG 2 0 0 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage
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MG200Q1ZS40
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PDF
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50Q2
Abstract: No abstract text available
Text: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.
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MG150Q2YS40
50Q2YS40
2-109C1A
50Q2
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PDF
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2SK1539
Abstract: F10W90 tccc DIODE KU 105 D
Text: H V X '> U -X /\°7 -M 0 S F E T HVX S eries P ow er M OSFET M flN -ä 2SK1539 OUTLINE DIMENSIONS F10W90] 900V 10A f c à iìj •A *S M (Ciss ö '/h S U , if \z V n )U • 7 .- < " j ^ - y 'y s ^ h t m • A C 2 4 0 V » A * X '|' ix 'y?y?ms ¿ %  © B Œ ® §!
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2SK1539
F10W90]
CJ400
2SK1539
F10W90
tccc
DIODE KU 105 D
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT M G1 50Q2YS40 Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . • • 4-FAST-on-Tab#110 High Input Impedance High Speed : tf = 0.5,ms Max.
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MG150Q2YS40
50Q2YS40
2-109C1A
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PDF
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1BW TRANSISTOR
Abstract: No abstract text available
Text: 7 = 3 9 - $ / FF 25 R 10 K SEE E U P EC Electrical properties R thC K Höchstzulässige Werte V ces Maximum rated values 1000 V 25 A 50 A 250 W TbH Thermal properties tv jo p ts tg I CRM t p = 1 ms P tot t c = 25°C 0,25 0,5 0,06 0,12 150 - 4 0 / + 150 - 4 0 / + 125
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34D32CI7
1BW TRANSISTOR
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PDF
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1N760
Abstract: 1N751
Text: Zener Diodes • 1N746A ~1N 759A P =400m W Package : DO-35 Vz Part No. Zz Ranking A E H r1N746 wm ’1N747 ms ' 1N748 1R tz CmA) ( fi) Max. Iz (mA) <*A) Vr (V) Max. 3.14~3.47 20 28 20 10 1 3.42"'“ 3.78 20 24 20 10 1 3 .7 1 -4 .1 0 20 23 20 10 1 wàr 1N749
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1N746A
DO-35)
r1N746
1N747
1N748
1N749
1N760
1N751
1N753
1N754
1N760
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PDF
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01e3
Abstract: SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334
Text: interrii H U F 7 5 6 3 1 S K 8 Data S h eet O c to b e r 1999 F ile N u m b e r 4 78 5 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS ON = 0 -0 3 9 Q , VGS = 10 V • Simulation Models
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HUF75631SK8
MS-012AA
HUF75631SK8
75631SK8
01e3
SKB 30 / 02
SKB 7 02
AN9321
AN9322
HUF75631SK8T
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage
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MG100Q1JS40
2-108A4A
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PDF
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Dsei 2x101-12A
Abstract: 2X121-02A DSEI 2*101-12A Dsei 2x101-06P 2X161-02P
Text: 2x60 ' 2x 160 V Typ e T Vju = 150-C ► N ew RAM V A _ _ _ 1 'fav @ T1c d=0.5 A ^FRMS *FSM 10 ms °C "^VJM A 4 5 °C A vF @ IF m ax. tfr typ . TVJ * 150°C V A T1VJ=25°C ns lR H @ -d i/d t TVJ = 100°C
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150-C
2x61-02P
2x61-1
2x61-12P
2x61-02A
2x61-06C
2x61-10B
2x61-12B
2x121-02P
2x121-02A
Dsei 2x101-12A
2X121-02A
DSEI 2*101-12A
Dsei 2x101-06P
2X161-02P
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage
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MG100Q1JS40
2-108A4A
100jus
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PDF
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