PMV213SN
Abstract: PMV213
Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.
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PMV213SN
M3D088
PMV213SN
MBB076
MSB003
771-PMV213SN215
PMV213
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sot23 marking V2p
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION
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M3D088
BFQ67
BFQ67
MSB003
R77/04/pp12
771-BFQ67-T/R
sot23 marking V2p
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marking code ASY
Abstract: MAS7838 MAS9138 MAS9138N MAS9138S TDI timing Crystal Oscillator TXC
Text: DA9138.003 29 January, 2001 MAS9138 ASYNCHRONOUS TO SYNCHRONOUS CONVERTER • Pin compatible with MAS7838 • Interfaces a duplex asynchronous to synchronous channel • Modem speeds of 600, 1.2k, 2.4k, 4.8k, 7.2k, 9.6k, 12k, 14.4k, 19.2k and 38.4k bps with a single 4.9152 MHz crystal
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DA9138
MAS9138
MAS7838
MAS9138
marking code ASY
MAS7838
MAS9138N
MAS9138S
TDI timing
Crystal Oscillator TXC
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op277
Abstract: OP-277 opamp 358 AD8610 LT1793 MAS9116 MC33078 OP1177 OP275
Text: DA9116.005 22 November, 2005 MAS9116 Stereo Digital Volume Control Signal Voltage up to ± 18V Two Independent Channels Use of Differential DACs Possible Serial Control Registers • • • • DESCRIPTION MAS9116 is a stereo volume control for audio systems, which require high output voltages AC3 .
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DA9116
MAS9116
MAS9116
16-bit
op277
OP-277
opamp 358
AD8610
LT1793
MC33078
OP1177
OP275
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atc 17-33
Abstract: class A push pull power amplifier class B push pull power amplifier philips catalog resistors RGS 13/1 U1 78L05 vhf linear amplifier BLF248 c4l7 SOT262
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF248 PIN CONFIGURATION
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M3D091
BLF248
OT262
SCA75
613524/03/pp16
atc 17-33
class A push pull power amplifier
class B push pull power amplifier
philips catalog resistors
RGS 13/1
U1 78L05
vhf linear amplifier
BLF248
c4l7
SOT262
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BLV91
Abstract: ferroxcube 1988 mda406 MDA401
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in
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BLV91/SL
OT-172D)
BLV91
ferroxcube 1988
mda406
MDA401
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TRANSISTOR CATALOGUE
Abstract: BLF547 MRB027 2E1P c17 dual mos L24C16
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF547 PIN CONFIGURATION • High power gain • Easy power control
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BLF547
OT262A2
TRANSISTOR CATALOGUE
BLF547
MRB027
2E1P
c17 dual mos
L24C16
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BST82
Abstract: SMD TRANSISTOR MARKING BR BST82 TRANSISTOR Q 817 smd 4814 transistor smd marking dk smd transistor marking A1 SMD TRANSISTOR MARKING DE MSB003 02p SMD TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor
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BST82
SC13b
SCA54
137107/00/01/pp12
BST82
SMD TRANSISTOR MARKING BR
BST82 TRANSISTOR
Q 817
smd 4814
transistor smd marking dk
smd transistor marking A1
SMD TRANSISTOR MARKING DE
MSB003
02p SMD TRANSISTOR
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philips if catv amplifier
Abstract: BGY66B BP317 DIN45004B SC16 philips application catv
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY66B CATV amplifier module Preliminary specification File under Discrete Semiconductors, SC16 Philips Semiconductors September 1994 Philips Semiconductors Preliminary specification CATV amplifier module BGY66B PINNING - SOT115C
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BGY66B
OT115C
MSB004
SCD34
113066/1500/01/pp8
philips if catv amplifier
BGY66B
BP317
DIN45004B
SC16
philips application catv
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BSH111
Abstract: MSB003
Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 01 — 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH111 in SOT23.
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BSH111
BSH111
MSB003
MSB003
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BUK98150-55A
Abstract: ID16 SC-73
Text: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK98150-55A
M3D087
BUK98150-55A
OT223
SC-73)
ID16
SC-73
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MBB691
Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Mar 06 Philips Semiconductors Product specification
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M3D088
PMBF107
SC13b
SCA54
135108/00/03/pp8
MBB691
MBB076
MAR 745 TRANSISTOR
MBB692
MSB003
PMBF107
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PHT4NQ10T
Abstract: SC-73 09581
Text: PHT4NQ10T TrenchMOS standard level FET M3D087 Rev. 02 — 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features
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PHT4NQ10T
M3D087
PHT4NQ10T
OT223.
OT223,
MSB002
OT223
SC-73
09581
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buk987
Abstract: BUK9875-100A SC-73
Text: BUK9875-100A TrenchMOS logic level FET Rev. 01 — 30 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9875-100A
BUK9875-100A
OT223
SC-73)
buk987
SC-73
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Untitled
Abstract: No abstract text available
Text: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.
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BSH111
M3D088
BSH111
MSB003
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PMV117
Abstract: PMV117EN
Text: PMV117EN µTrenchMOS enhanced logic level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology Product availability: PMV117EN in SOT23.
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PMV117EN
M3D088
PMV117EN
MSB003
MBB076
PMV117
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BFR540
Abstract: MSB003 BFR540 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a
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BFR540
BFR540
MSB003
BFR540 philips
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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Untitled
Abstract: No abstract text available
Text: PMV56XN µTrenchMOS extremely low level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV56XN in SOT23. 2. Features
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PMV56XN
M3D088
PMV56XN
MSB003
MBB07
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GS 78L05 N
Abstract: No abstract text available
Text: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures
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BLF248
OT262
MCB627
GS 78L05 N
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Untitled
Abstract: No abstract text available
Text: bb53R31 0 0 3 2 3 5 3 bfll M AP X Philips Sem iconductors Product specification CATV amplifier module BGY67 N APER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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bb53R31
BGY67
PINNING-SOT115C
DIN45004B;
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Untitled
Abstract: No abstract text available
Text: bbSBTBl DDBEMBS bTfl Philips Semiconductors APX Preliminary specification CATV amplifier module ^ BGY885A N AMER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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BGY885A
OT115C
MSB004
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors • b b 5 3 T 31 0032405 f lD T | A p ^ P r a d u c ts p e c if ic ^ CATV amplifier module BGY681 N AUER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN CONFIGURATION DESCRIPTION PIN » Excellent linearity • Extremely low noise
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BGY681
OT115C
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors bbSBTBl DQ3S3S1 071 • APX Product specification CATV amplifier module BGD508 N AMER PHILIPS/DISCRETE PINNING -SOT115C. FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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BGD508
-SOT115C.
46dBmV;
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