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    MT4S Price and Stock

    Toshiba America Electronic Components MT4S300U(TE85L,O,F

    X34 PB-F RADIO-FREQUENCY SIGE HE
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    DigiKey MT4S300U(TE85L,O,F Digi-Reel 8,870 1
    • 1 $0.76
    • 10 $0.581
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    • 1000 $0.35673
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    MT4S300U(TE85L,O,F Cut Tape 8,870 1
    • 1 $0.76
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    MT4S300U(TE85L,O,F Reel 6,000 3,000
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    Verical MT4S300U(TE85L,O,F 475 46
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    Chip1Stop MT4S300U(TE85L,O,F Cut Tape 475
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    • 100 $0.428
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    Cornell Dubilier Electronics Inc DMT4S1K-F

    CAP FILM 10000PF 10% 400VDC RAD
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    DigiKey DMT4S1K-F Bulk 479 1
    • 1 $3.03
    • 10 $1.985
    • 100 $1.4312
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    Mouser Electronics DMT4S1K-F 371
    • 1 $2.34
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    Newark DMT4S1K-F Bulk 27,500 500
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    Bristol Electronics DMT4S1K-F 240
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    TTI DMT4S1K-F Bulk 7,000 500
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    Master Electronics DMT4S1K-F
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    • 1000 $0.975
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    IndustrialeMart TK4M-T4SN

    TEMP CONTROL SSR 100-240VAC
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    DigiKey TK4M-T4SN Box 2 1
    • 1 $183
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    Altech Corporation CMT4S

    MINI FEED-THROUGH TERM W/TAB
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    DigiKey CMT4S Bulk 50
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    • 100 $1.409
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    Mouser Electronics CMT4S
    • 1 $2.96
    • 10 $1.68
    • 100 $1.52
    • 1000 $1.23
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    Newark CMT4S Bulk 50
    • 1 $2.37
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    • 100 $1.94
    • 1000 $1.55
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    RS CMT4S Bulk 11 Weeks 50
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    TestEquity LLC CMT4S
    • 1 $1.73
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    • 100 $1.73
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    IndustrialeMart TK4M-T4SR

    TEMP CONTROL SSR RELAY 100-240V
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    DigiKey TK4M-T4SR Box
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    Find more MT4S price and stock on Findchips.com

    MT4S Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT4S03A Toshiba Scan PDF
    MT4S03A Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT4S03AU Toshiba Scan PDF
    MT4S03AU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    MT4S03BU Toshiba Transistors Original PDF
    MT4S03BU Toshiba Japanese - Transistors Original PDF
    MT4S04A Toshiba Scan PDF
    MT4S04A Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT4S04AU Toshiba Scan PDF
    MT4S04AU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    MT4S06 Toshiba Scan PDF
    MT4S06 Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT4S06U Toshiba Scan PDF
    MT4S06U Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    MT4S07 Toshiba Original PDF
    MT4S07U Toshiba VHF~UHF Band Low Noise Amplifier Applications Original PDF
    MT4S100T Toshiba UHF LOW NOISE AMPLIFIER APPLICATION Original PDF
    MT4S100U Toshiba High-frequency SiGe Heterojunction Bipolar Transitor Original PDF
    MT4S101T Toshiba High-frequency SiGe Heterojunction Bipolar Transitor Original PDF
    MT4S101U Toshiba High-frequency SiGe Heterojunction Bipolar Transitor Original PDF

    MT4S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PH ON 823

    Abstract: MT4S101U PH ON 823 m mje 346
    Text: M T 4 S 1 0 1 U SPICE2G6 model parameters NETLIST .SUBCKT MT4S101U CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LWC 1 6 LWS 4 7 CC 1 3 Ll1 7 8 Ll2 7 9 CBC 1 2 CBS 2 9 CCS 1 9 CES 3 9 Dsub 8 6 Q1 6 5 4 +AREA = .MODEL csub +IS = +N = +BV = +IBV = +CJO = +VJ =


    Original     		PDF MT4S101U PH ON 823 MT4S101U PH ON 823 m mje 346

    Untitled

    Abstract: No abstract text available
    Text: MT4S300T 東芝トランジスタシリコンゲルマニウムＮＰＮエピタキシャルプレーナ型 MT4S300T 単位: mm ○ UHF～SHF 帯 低雑音増幅用 1.2±0.05 0.9±0.05 • 高利得です。:|S21e|2=18dB 標準 (@f=2GHz) • 高静電破壊耐量:2kV 以上(HBM 法)


    Original     		PDF MT4S300T

    Untitled

    Abstract: No abstract text available
    Text: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm 2.1±0.1 FEATURES 3 1 2 0.2+0.1 –0.05 1 0~0.1 P8 0.15±0.05 4 +0.05 0.95 –0.15 Marking 3 High Gain:|S21e|2=15.0dB @f=2GHz


    Original     		PDF MT4S102U

    Untitled

    Abstract: No abstract text available
    Text: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT4S24U

    Untitled

    Abstract: No abstract text available
    Text: MT4S101U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 2.1±0.1 FEATURES 1 7 0.2 +0.1 –0.05 4 3 0～0.1 P Type name +0.05 0.95 –0.15 2 0.15±0.05 Marking 1 High Gain:|S21e|2=16.0dB @f=2GHz


    Original     		PDF MT4S101U

    Untitled

    Abstract: No abstract text available
    Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage


    Original     		PDF MT4S100T

    Untitled

    Abstract: No abstract text available
    Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage


    Original     		PDF MT4S100T

    Untitled

    Abstract: No abstract text available
    Text: MT4S104U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:|S21e|2=10.0dB @f=5.2GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.25dB (@f=5.2GHz)


    Original     		PDF MT4S104U

    MT4S03A

    Abstract: No abstract text available
    Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT4S03A MT4S03A

    Untitled

    Abstract: No abstract text available
    Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics


    Original     		PDF MT4S102T

    MT4S06U

    Abstract: No abstract text available
    Text: MT4S06U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm


    Original     		PDF MT4S06U MT4S06U

    MT4S03

    Abstract: No abstract text available
    Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT4S03AU MT4S03

    Untitled

    Abstract: No abstract text available
    Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 4 3 1.2±0.05 2 0.2±0.05 High Gain:|S21e| =17.0dB @f=2GHz 1 • 2 Low Noise Figure :NF=0.72dB (@f=2GHz) 0.8±0.05 •


    Original     		PDF MT4S100T

    MT4S100U

    Abstract: No abstract text available
    Text: MT4S100U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 2.1±0.1 FEATURES 1.25±0.1 • Low Noise Figure :NF=0.72dB @f=2GHz · High Gain:|S21e| =16.0dB (@f=2GHz) 1 Type name +0.05 0.95 –0.15


    Original     		PDF MT4S100U MT4S100U

    MT4S24U

    Abstract: No abstract text available
    Text: MT4S24U 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT4S24U 単位: mm ○ VHF~UHF 帯低雑音増幅用 • 雑音特性が優れています。: NF = 1.55dB 標準 (@f = 2 GHz) • 利得が高い。:|S21e|2 = 11.5dB(標準) (@f = 2 GHz)


    Original     		PDF MT4S24U 20mmx25mmx1 55mmt) MT4S24U

    MT4S24U

    Abstract: MT4S 42GA
    Text: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT4S24U MT4S24U MT4S 42GA

    MT4S03A

    Abstract: No abstract text available
    Text: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT4S03A MT4S03A

    MT4S03AU

    Abstract: No abstract text available
    Text: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF MT4S03AU MT4S03AU

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT4S04U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 4 S 0 4 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 13.5 dB f = 1 GHz M A Y I M I I M R A T I N E ( Ta = 5 W 1


    OCR Scan     		PDF MT4S04U

    MT4S03U

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT4S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MTA<;n3ii V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT4S03U MT4S03U

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT4S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF MT4S03

    Untitled

    Abstract: No abstract text available
    Text: M ICRON 128K X MT4S1288 8 SRAM MODULE 128Kx 8 SRAM SRAM MODULE FEATURES • High speed: 20*, 25 and 30ns • High-performance, low-power CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions • All inputs and outputs are TTL compatible


    OCR Scan     		PDF MT4S1288 128Kx 32-Pin MT4S1288D-20

    Untitled

    Abstract: No abstract text available
    Text: MT4S12832 128K X 32 SRAM M OD ULE jV U G IR O N 128Kx 32 SRAM SRAM MODULE FEATURES • High speed: 15*, 20,25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions


    OCR Scan     		PDF MT4S12832 512KB 128Kx 64-Pin S12832 MT4S12B32

    MT4S04AU

    Abstract: No abstract text available
    Text: TO SH IBA MT4S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S04AU Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • 1.25 ±0.1 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 13.5 dB f = 1 GHz m a v ì m i i m R A TiM r;«; r r a


    OCR Scan     		PDF MT4S04AU MT4S04AU