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    Untitled

    Abstract: No abstract text available
    Text: |v /|I C R O N 64K SRAM MODULE X MT4S6416 16 SRAM MODULE 64Kx 16 SRAM FEATURES • H igh speed: 20*, 25 and 30ns • H igh-perform ance, low -pow er, CMOS double-m etal process • Single +5V ±10% p ow er supply • Easy m em ory expansion w ith CE and OE functions


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    PDF MT4S6416 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: |V /ll Z R O I\J MT4S6416 SRAM MODULE 64Kx 16 SRAM FEATURES PIN ASSIGNMENT (Top View High speed: 30, 35 and 45ns H igh-perform ance, low -pow er, CM O S process Single +5V ±10% pow er supply Easy m em ory expansion w ith CE function Upper and low er byte select


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    PDF MT4S6416 40-Pin

    IC SRAM 64K X 4

    Abstract: No abstract text available
    Text: MT4S6416 64K X 16 SRAM MODULE M IC R O N SRAM MODULE 64Kx 16 SRAM FEATURES • High speed: 20*, 25 and 30ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions • Upper and lower byte select


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    PDF MT4S6416 40-pin MT4S641S IC SRAM 64K X 4

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D I^ IIC Z R O N blllSMT 0003T73 bT3 64K SRAM MODULE X IMRN MT4S6416 16 SRAM MODULE 64Kx 16 SRAM FEATURES • High speed: 20*, 25 and 30ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply


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    PDF 0003T73 MT4S6416 40-pin

    Untitled

    Abstract: No abstract text available
    Text: ¿L í,í. >Y :-r m%á 3ÔE » MICRON TECHNOLOGY INC itM^iL V • blllSMñ O G Q S W . .j/,»l-4*>,J"'V 'y y 1 «ÎIRN, ^ -T ta T ^ ÎdâMta * * - ,Æ REPLACES: MT85C16$4 64Kx 16 SRAM SRAM MODULE FEATURES • « • • • • PIN ASSIGNMENT (Top View)


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    PDF MT85C16 40-pin T-46-23-14 MT85C1664)

    mt42C4256z

    Abstract: MT4C1024DJ
    Text: ADVANCE M IC R O N • MT4C10016/7 Tí CMNCX ClGV INC DRAM 16 MEG x 1 DRAM FAST PAGE MODE: MT4C10016 STATIC COLUMN: MT4C10017 FEATURES • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply: +5V±10% or +3.3V±10%


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    PDF MT4C10016/7 250mW 4096-cycle MT4C10016 MT4C10017 24-Pin 120ns MT4C1024DJ 100ns mt42C4256z