km681001j-20
Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Text: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ
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Original
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AS7C1024-10TJ
AS7C1024-12TJ
AS7C1024-15TJ
AS7C1024-20TJ
AS7C1024L-10TJ
AS7C1024L-12TJ
AS7C1024L-15TJ
AS7C1024L-20TJ
AS7C1028-10TJ
AS7C1028-12TJ
km681001j-20
TC55B328J-12
256Kx4
TC55B465J10
TC55B8128J20
PDM41028SA-15SO
TC55B8128J-12
TC55328J-20
KM681001J-25
PDM41024S20
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE ]> b i l l i g 0004GGS ¿OI MICRON 256K X IPIRN MT8S25632 32 SRAM MODULE - ' " P J t - i ' 5 - 1 4 SRAM MODULE 256K X 32 SRAM FEATURES • High speed: 15*, 20,25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal
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OCR Scan
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0004GGS
MT8S25632
64-Pin
MT6S2S632
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC b lllS H T 5SE D iCRCDN D 0 0 3 m 2 7ññ 256K MRN MT5C1005 X 4 SRAM T ^ ß -2 3 -tO SRAM 256K x 4 SRAM FEATURES • • • • • • High speed: 12», 15*, 17,20,25,35 and 45ns High-performance, low-power, CMOS double-metal process
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OCR Scan
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MT5C1005
28-Pin
C1993,
MT5C1006
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PDF
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transistor t5c
Abstract: No abstract text available
Text: PRELIMINARY MT5C1005 256K X 4 SRAM SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 25,35, and 45ns • High performance, low power, CMOS double metal process • Single +5V (±10%) power supply • Easy memory expansion with CE and OE
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OCR Scan
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MT5C1005
28L/400
400mil)
MT5C1005DJ-25
transistor t5c
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PDF
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MT5C1005DJ-20
Abstract: 5c1005
Text: |u iic : r o M T5C1005 256K X 4 SR AM n SRAM 256K x 4 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 12,15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options
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OCR Scan
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T5C1005
28-Pin
MTSC1005
MT5C1005
MT5C1005DJ-20
5c1005
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PDF
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256K x 8 SRAM dip
Abstract: No abstract text available
Text: MT5C1005 256K X 4 SRAM |U|ICZRON 256K X 4 SRAM SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 12*, 15*, 17, 20, 25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options
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OCR Scan
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MT5C1005
28-Pin
256K x 8 SRAM dip
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PDF
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MT8S25632
Abstract: No abstract text available
Text: p ilC R O N 256K SRAM MODULE MT8S25632 32 SRAM MODULE X 256K x 32 SRAM FEATURES • High speed: 15*, 20, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply_ • Easy memory expansion with CE and OE functions
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OCR Scan
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MT8S25632
64-Pin
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PDF
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marking wp1
Abstract: MTBS25632
Text: MT8S25632 2 5 6 K X 32 S R A M M O D U L E I^ IIC IR a íM SRAM MODULE 256K x 32 SRAM FEATURES • High speed: 15, 20 and 25ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions
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OCR Scan
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MT8S25632
64-Pin
MTBS25632
MT9S25632
marking wp1
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PDF
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SF4M1
Abstract: No abstract text available
Text: |U | =RO N 256K SRAM MODULE MT8S25632 32 SRAM MODULE X 256K x 32 SRAM FEATURES • High speed: 15*, 20, 25 and 35ns • High-density 1MB design • High-perform ance, low-power, CM OS double-metal process • Single +5V ±10% power supply_ • Easy m emory expansion w ith CE and OE functions
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OCR Scan
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MT8S25632
64-Pin
MT6S25632
SF4M1
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PDF
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MT5C1005-25
Abstract: WP1Z
Text: M IC R O N I 256K r.'ICONDUCTOR INC SRAM MT5C1005 X 4 SRAM 256Kx 4 SRAM FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages Plastic DIP 400 mil Plastic SOJ (400 mil) None DJ • 2V data retention (optional)
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OCR Scan
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MT5C1005
256Kx
28-Pin
0D10274
QQ1027S
MT5C1005-25
WP1Z
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PDF
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DC1307
Abstract: MT5C1005DJ-25IT
Text: MICRON SEMICONDUCTOR INC b7E D • bi ll 541 G G G ^ O S 3T1 H M R N M IC R O N I MT5C1005 256K X 4 SRAM 256K X 4 SRAM SRAM 5 VOLT SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 12,15,17,20, 25 and 35 • High-performance, low-power, CMOS double-metal
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OCR Scan
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MT5C1005
28-Pin
MT5C100S
DC1307
MT5C1005DJ-25IT
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PDF
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