Untitled
Abstract: No abstract text available
Text: Packaging technology PSGA – an innovative IC package for single and multichip designs More and more applications with multipin ICs or multichip systems require even smaller, flatter and more economical packages. The innovative PSGATM polymer stud grid array package for
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232-pin,
B-3001
B-8020
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cohesive
Abstract: No abstract text available
Text: Fujitsu offers the widest range of multichip module MCM and multichip package (MCP) technology available in the industry today. MCM is a completely custom solution that creates a specialized module. MCP offers multiple chips in a standard package and form factor.
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AD834x
Abstract: AD77XX AD832x MCP market AD78xx AD92xx AD983x 8B2000 9433 ad9432
Text: Analog Devices, Inc. MultiChip Products Business Unit MCP High Performance Signal Processing Solutions MultiChip Products Business Unit ADI MCP’s MIXED SIGNAL INTEGRATED CHIP MODULES: Sub-System Solutions for Signal Processing System Integrators who can benefit from Higher Levels of Performance and Density
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PSRAM
Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory
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M36L0R7060T1
M36L0R7060B1
M36L0R7060T1:
88C4h
M36L0R7060B1:
88C5h
TFBGA88
PSRAM
M36L0R7060B1
M36L0R7060T1
M58LR128HB
M58LR128HT
M69KB096AM
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P113 IR
Abstract: teseo 2 data output STA8058A 14095 STA8058ATR
Text: STA8058 TESEO high performance GPS multichip module MCM Data brief − production data Features • GPS multichip module: – STA2058 TESEO Baseband – STA5620 RF Front-end ■ Complete embedded memory system: – Flash 256 KB + 16 Kbytes – RAM 64 Kbytes.
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STA8058
STA2058
STA5620
66-MHz
P113 IR
teseo 2 data output
STA8058A
14095
STA8058ATR
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PSRAM
Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory
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M36L0R7060T1
M36L0R7060B1
M36L0R7060T1:
88C4h
M36L0R7060B1:
88C5h
TFBGA88
PSRAM
M36L0R7060B1
M36L0R7060T1
M58LR128HB
M58LR128HT
ubp 100
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M36L0T7060B
Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
Text: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory
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M36L0T7060T2
M36L0T7060B2
M36L0T7060T2:
88C4h
M36L0T7060B2:
88C5h
M36L0T7060B
M36L0T7060
TFBGA88
M69KW096B
DSA0042593
flash E2p
M58LT128HB
M58LT128HT
M36L0T7
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Untitled
Abstract: No abstract text available
Text: STA8058 TESEO high performance GPS multichip module MCM Data brief production data Features • GPS multichip module: – STA2058 TESEO Baseband – STA5620 RF Front-end ■ Complete embedded memory system: – Flash 256 KB + 16 Kbytes – RAM 64 Kbytes.
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STA8058
STA2058
STA5620
66-MHz
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M36L0T8060
Abstract: flash E2p M69KW096B
Text: M36L0T8060T1 M36L0T8060B1 256 Mbit 16 Mb x16, multiple bank, multilevel, burst Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package • 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory
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M36L0T8060T1
M36L0T8060B1
M36L0T8060T1:
880Dh
M36L0T8060B1:
880Eh
TFBGA88
M36L0T8060
flash E2p
M69KW096B
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P113H
Abstract: teseo 2 data output ARM7 teseo teseo STA2058 STA8058A STA5620 P113 IR STA8058 5.5MB
Text: STA8058 TESEO high performance GPS multichip module MCM Data Brief Features • GPS multichip module: – STA2058 TESEO Baseband – STA5620 RF Front-end ■ Complete embedded memory system: – Flash 256 KB + 16 Kbytes – RAM 64 Kbytes. ■ 66-MHz ARM7TDMI 32 bit processor
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STA8058
STA2058
STA5620
66-MHz
STA8058
17x19
25x25
P113H
teseo 2 data output
ARM7 teseo
teseo
STA8058A
P113 IR
5.5MB
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Multi-Chip Modules motorola
Abstract: No abstract text available
Text: MOTOROLA SC •CNEI'IORY/ASI L^E D b3t.7ESl □Df iTbtn 053 M N0T3 MOTOROLA SEMICONDUCTOR Order by MCMLiD • TECHNICAL DATA Advance Information APPLICATION SPECIFIC MULTICHIP MODULES MCML SERIES MULTICHIP MODULES CMOS/BICMOS SEMICONDUCTORS This specification defines the product characteristics for the MCML Series of
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OCR Scan
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sma098
110T3
Multi-Chip Modules motorola
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Telesis
Abstract: intellitech teradyne victory 70T3539M corelis jtag AN-411 BC256 IDT70T3539M ontap JTAG Technologies
Text: JTAG Testing of IDT’s Multichip Modules Application Note AN-411 JTAG TESTING OF MULTICHIP MODULES APPLICATION NOTE AN-411 Introduction The intent of this application note is to provide instruction on how to perform JTAG test pattern generation TPG for IDT’s MCMs on a
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AN-411
Telesis
intellitech
teradyne victory
70T3539M
corelis jtag
AN-411
BC256
IDT70T3539M
ontap
JTAG Technologies
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l202
Abstract: L575
Text: Discrete LED Sizes and Packages O. « SOT23 SINGLE CHIP SML10 T1-3/4 SINGLE CHIP NARROW BEAM L200 T 1-3/4 6 MULTICHIP L206 SERIES T3/4 SINGLE CHIP L080 T1 -3/4 SINGLE CHIP WIDE BEAM L200 12 MULTICHIP L375 SERIES T1 SINGLE CHIP L120 T 1-3/4 SINGLE CHIP FLAT TOP
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SML10
l202
L575
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M39P0R1080E4
Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
Text: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)
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M39P0R9080E4
M39P0R1080E4
TFBGA165
64-bit
M39P0R1080E4
M39P0R9080E4
M58PR001LE
M58PR512LE
M39P0R09080E4
BCAS SD
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Untitled
Abstract: No abstract text available
Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM
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M36P0R8070E0
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M36P0R8070E0
Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
Text: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM
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M36P0R8070E0
TFBGA107
M36P0R8070E0
M58PR256J
M69KB128AA
strataflash 256 x 2 Mbits
ECR15
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M36L0T7050T2
Abstract: M58LT128HB M58LT128HT M36L0t7050
Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM
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M36L0T7050T2
M36L0T7050B2
M36L0T7050T2:
88C4h
M36L0T7050B2:
88C5h
M36L0T7050T2
M58LT128HB
M58LT128HT
M36L0t7050
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Untitled
Abstract: No abstract text available
Text: PCB LED Sizes & Packages TRI-LEVEL N/A N/A N/A BI-LEVEL m N/A 1 SINGLES m H % li 1 AXIAL SINGLE CHIP SINGLE CHIP SINGLE CHIP DUAL CHIP 6 MULTICHIP
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Untitled
Abstract: No abstract text available
Text: BGA Technology f eatures ▲ JEDEC compliant standard PBGA packages ▲ Extensive experience in mass producing cost-effective & high-volume singlechip and multichip PBGA packages ▲ Tailored to higher I/Os and higher clock frequency designs ▲ Enhanced electrical, mechanical and
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APT-BGATB-20380-1
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Spansion
Abstract: S71VS064R S29VS064 NLB056 NS032J S29VS064R VDE044 NSB056 S29NS032J Spansion MCP products, 56
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA September 23, 2009 Obsolescence Notification No: Subject: 2775 Obsolescence of the discrete 110nm CMOS 1.8V NS032J Products & the MultiChip Packages MCP containing 110nm CMOS 1.8V NS032J Products.
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110nm
NS032J
S29NS032J
S71NS032J
44-ball
VDE044)
Spansion
S71VS064R
S29VS064
NLB056
S29VS064R
VDE044
NSB056
S29NS032J
Spansion MCP products, 56
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kyocera design guide
Abstract: dupont 951 Ferro ltcc dupont 943 dupont 951 green tape kyocera design guide ltcc kyocera ceramic package Kyocera Electronic Components
Text: Uncontrolled copy unless stamped in red. LTCC DIVISION OF KYOCERA AMERICA DESIGN GUIDE ♦HIGH RELIABILITY ♦HIGH INTERCONNECT DENSITY ♦HIGH I/O COUNT ♦EXCELLENT POWER HANDLING ♦LOW-FIRE MATERIAL ♦CUSTOM TRANSMISSION LINES ♦CUSTOM MULTICHIP MODULES
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005in.
004in/in.
kyocera design guide
dupont 951
Ferro
ltcc
dupont 943
dupont 951 green tape
kyocera design guide ltcc
kyocera ceramic package
Kyocera Electronic Components
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MAX6654MEE
Abstract: fenwal 110 samsung crt monitor circuit diagram 2N3904 2N3906 CMPT3904 KST3904-TF MAX6654 SMBT3904 SST3904
Text: 19-1836; Rev 0; 10/00 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface _Applications Desktop Computers Notebook Computers Servers Thin Clients Workstations Test and Measurement Multichip Modules SMBus is a trademark of Intel Corp.
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11-Bit,
MAX6654MEE
MAX6654
MAX6654MEE
fenwal 110
samsung crt monitor circuit diagram
2N3904
2N3906
CMPT3904
KST3904-TF
MAX6654
SMBT3904
SST3904
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Untitled
Abstract: No abstract text available
Text: 19-1836; Rev 1; 9/01 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface _Applications Desktop Computers Notebook Computers Servers Thin Clients Workstations Test and Measurement Multichip Modules SMBus is a trademark of Intel Corp.
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MAX6654
2N3904
2N3906
MAX6654
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BCR141S
Abstract: BCR141 BCR141F BCR141L3 BCR141T bcr1 marking code wd
Text: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package
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BCR141.
BCR141S
BCR141/F/L3
BCR141T/W
BCR141S/U
EHA07184
EHA07174
BCR141
BCR141F
BCR141
BCR141F
BCR141L3
BCR141T
bcr1
marking code wd
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