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    TPM2323-30

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 2.3 GHz • High gain - G1dB = 11.5 dB at 2.3 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    Original     		PDF TPM2323-30 2-16G1B) MW40040196 TPM2323-30

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.3 GHz • High gain - G idB = 11.5 dB at 2.3 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM2323-30 MW40040196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.3 GHz • High gain - G-idB = 11.5 dB at 2.3 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM2323-30 MW40040196

    u432

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power " P-ldB = 4 4 .5 d B m a t 2 3 G H z • High gain - G i dB = 11.5 dB at 2.3 G H z • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM2323-30 TPM2323-30 MW40040196 u432