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    TIM1213-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM1213-2 MW50210196 TIM1213-2 PDF

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    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET T IM 1213-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G-icb = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		10T7BS0 PDF