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TIM1213-10 Abstract: No abstract text available Text: TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	Original	PDF	TIM1213-10 M1213-10 2-11C1B) MW50260196 TIM1213-10
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1213-10 2-11C1B) MW50260196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1213-10 2-11C1B) MW50260196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - GidB - 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	PDF	TIM1213-10 2-11C1B) 1213-10L TD1725D