TIM1414-8L
Abstract: No abstract text available
Text: TOSHIBA TIM1414-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz
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TIM1414-8L
2-11C1B)
MW50320196
TIM1414-8L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET T IM 1 4 1 4 - 8 L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39.5 dBm at 14.0 GHz to 14.5 GHz
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MW50320196
TIM1414-8L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 14.0 GHz to 14.5 GHz
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OCR Scan
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TIM1414-8L
25GE12
MW50320196
414-8L
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