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    TIM4450-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM4450-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 4.4 GHz to 5.0 GHz


    Original     		TIM4450-30L 2-16G1B) MW50550196 TIM4450-30L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power * P-idB = 45 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-30L IM4450-30L MW50550196 002237b PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-30L MW50550196 TIM4450-30L PDF