Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MW50560196 Search Results

    MW50560196 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TIM4951-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM4951-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4951-4 2-11D1B) MW50560196 TIM4951-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM4951-4 MW50560196 TIM4951-4 0D22401 PDF