TIM4951-8
Abstract: No abstract text available
Text: TOSHIBA TIM4951-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package
|
Original
|
TIM4951-8
2-11D1B)
MW50570196
TIM4951-8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G 1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally m atched • H erm etically sealed package
|
OCR Scan
|
TIM4951-8
MW50570196
TIM4951-8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power ' PidB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G-|dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package
|
OCR Scan
|
TIM4951-8
MW50570196
D02S405
TIM4951-8
|
PDF
|