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    TIM4951-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM4951-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 9.0 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4951-16 2-16G1B) MW50580196 TIM4951-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz • High gain - G-idB = 9.0 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM4951-16 MW50580196 172SG TIM4951-16 c17250 PDF