TIM6472-4L
Abstract: TIM5964-4L
Text: TOSHIBA TIM6472-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 6.4 GHz to 7.2 GHz • High gain
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TIM6472-4L
2-11D1B)
MW50850196
TIM5964-4L
TIM6472-4L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz
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OCR Scan
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TIM6472-4L
MW50850196
CH72SD
0Q22547
TIM5964-4L
TCH7250
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P i dB = 36 dBm at 6.4 GHz to 7.2 GHz
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OCR Scan
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TIM6472-4L
MW50850196
5964-4L
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PDF
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