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    TIM7785-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7785-8 2-11D1B) MW51070196 TIM7785-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF MW51070196 1M725G TIM7785-8 TIM7785-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-8 MW51070196 TIM7785-8