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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-8SL 2-11D1B) MW51090196 TIM7785-8SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-8SL TCH7250 TIM7785-8SL MW51090196 TGT725D DG227D4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-8SL MW51090196 7785-8SL