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    TIM7785-14L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-14L 2-16G1B) MW51100196 TIM7785-14L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-14L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 41 '5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-14L MW51100196