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Catalog Datasheet	MFG & Type	PDF	Document Tags
TIM7785-16 Abstract: fet toshiba Text: TOSHIBA TIM7785-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package	Original	PDF	TIM7785-16 2-16G1B) MW51110196 TIM7785-16 fet toshiba

Catalog Datasheet

MFG & Type

PDF

Document Tags

TIM7785-16

Abstract: fet toshiba
Text: TOSHIBA TIM7785-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

Original

PDF

TIM7785-16 2-16G1B) MW51110196 TIM7785-16 fet toshiba