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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-16SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-16SL 2-16G1B) MW51130196 TIM7785-16SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-16SL MW51130196 TIM7785-16SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-16SL TIM7785-16SL MW51130196