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    TIM8596-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    Original     		TIM8596-4 MW51180196 TIM8596-4 PDF

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    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-idB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		TIM8596-4 MW51180196 G0S272G PDF