sot-363 n-channel mosfet
Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel
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CMKDM3590
CMKDM7590
CMKDM3575
OT-363
CMKDM3590:
CMKDM7590:
CMKDM3575:
RATI150
CMKDM7590
sot-363 n-channel mosfet
sot-363 p-channel mosfet
Dual N-Channel mosfet sot-363
marking code 12 SOT-363 amplifier
high current sot-363 p-channel mosfet
MARKING 3C5
Dual P-Channel mosfet sot-363
SOT-363 marking th
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Untitled
Abstract: No abstract text available
Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage
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TC1550
TC1550
DSFP-TC1550
A091608
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marking code R
Abstract: MARKING CODE W
Text: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMBDM3590
CMBDM7590
CMBDM3590:
CMBDM7590:
OT-923
200mA
CMBDM7590
marking code R
MARKING CODE W
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CMUDM7590
Abstract: on semiconductor marking code sot CMUDM3590
Text: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMUDM3590
CMUDM7590
CMUDM3590
OT-523
CMUDM3590:
CMUDM7590:
200mA
CMUDM7590
on semiconductor marking code sot
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MOSFET P-channel SOT-23
Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Text: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMPDM3590
CMPDM7590
CMPDM3590
OT-23
CMPDM3590:
CMPDM7590:
200mA
MOSFET P-channel SOT-23
Power MOSFET N-Channel sot-23
C759
C359
sot-23 P-Channel MOSFET
MOSFET P channel SOT-23
P-Channel SOT-23 Power MOSFET
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CMSDM7590
Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
Text: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs
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CMSDM3590
CMSDM7590
CMSDM3590
OT-323
CMSDM3590:
CMSDM7590:
200mA
marking CODE 75C
Complementary MOSFETs
logic level complementary MOSFET
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Untitled
Abstract: No abstract text available
Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance
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TC6215
TC6215
DSFP-TC6215
A122208
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Untitled
Abstract: No abstract text available
Text: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN
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TD3002Y
VNDS06
VPDS06
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uPA67
Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
Text: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4
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PA500
PA600
200mA
PA572T
PA672T
PA502T
PA602T
PA606T
PA611TA
PA573T
uPA67
SC74A
uPA672T
UPA572T
upa500
uPA600
UPA607T
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40841
Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096
CA3096C,
CA3096,
CA3096A
CA3096A,
CA3096C
40841
40841 MOSFET
CA3096AE
CA3096
CA3096AM
CA3096AM96
CA3096CE
CA3096E
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM14615AA-N •General Description ELM14615AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. With N-channel(N-ch) and P-channel(P-ch) packed in one IC.ELM14615AA-N also includes ESD-protected function.
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ELM14615AA-N
ELM14615AA-N
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TD3001
Abstract: No abstract text available
Text: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E
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OCR Scan
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TD3001Y
TD3001
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Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
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SSM6E03TU
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Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
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SSM6E03TU
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TC6215
Abstract: No abstract text available
Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels
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TC6215
TC6215
DSFP-TC6215
A122208
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marking code V6 33 surface mount diode
Abstract: marking code V6 31 surface mount diode IRF7350 IRF7350P Dual N P-Channel
Text: PD - 94226B IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 3 6 D2 4 5 D2 P -C H A N N E L M O S F E T N-Ch P-Ch VDSS 100V
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94226B
IRF7350
-100V
IRF7350
IRF7350PBF
IRF7350TR
marking code V6 33 surface mount diode
marking code V6 31 surface mount diode
IRF7350P
Dual N P-Channel
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IRF7350
Abstract: f-7101
Text: PD - 94226B IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 3 6 D2 4 5 D2 P -C H A N N E L M O S F E T N-Ch P-Ch VDSS 100V
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94226B
IRF7350
-100V
IRF7350
f-7101
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Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
inherent00mA
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Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
i00mA
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TC2320TG
Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
-200mA
ultrasound transducer circuit driver 1mhz
TC2320
mosfet buffers output current 100mA
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marking code CT
Abstract: "MARKING CODE CT" SOT-963
Text: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for
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CMRDM3575
OT-963
200mA
25-February
marking code CT
"MARKING CODE CT"
SOT-963
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Untitled
Abstract: No abstract text available
Text: SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features • Low VGS th : VGS(th)=1.0~3.0V Small footprint due to small package Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A)
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SUF2001
13-MAR-13
KSD-T7F002-001
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RTJC
Abstract: No abstract text available
Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s
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FDD8424H
FDD8424H
RTJC
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FDMJ1032C
Abstract: marking 032 SC-75 Dual N & P-Channel
Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement
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FDMJ1032C
FDMJ1032C
marking 032
SC-75
Dual N & P-Channel
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