2n5555 Vgs(off)
Abstract: 2N5555 CS 150 10v
Text: 2N5555 ♦I N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RA T I N G S Tfl=25°C unless otherwise noted
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2N5555
2n5555 Vgs(off)
CS 150 10v
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2SK291
Abstract: No abstract text available
Text: HITACHI 2SK291-SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY LOW NOISE AMPLIFIER n _ Î j_ !. IXuii 2 StHJTli 3 C*tc ia tr/n JEDEC TO-92) MAXIMUM CHANNEL POWER DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS {T&=25#C) Tieni Symbol 2SK29I
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2SK291
2SK29I
2SK291
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Untitled
Abstract: No abstract text available
Text: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.
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Q0175S3
BSJ111
BSJ112
BSJ113
rBSJ113
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sd403
Abstract: CD11G
Text: High Speed DMOS N-Channel Switch caioqic CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
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SD403
SD403
19mmhos)
SD40tance
CD11G
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2N3819 junction fet
Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
Text: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field
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2N3819
200UA
2N3819 junction fet
transistor 2N3819
2N3O19
2N3819 fet
2n3819 transistor
VGD25
200UA
2N3819
VDS1
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Untitled
Abstract: No abstract text available
Text: IRFNL210B N-Channel B-FET 200 V, 1.0 A, 1.5 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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IRFNL210B
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Untitled
Abstract: No abstract text available
Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
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SD403
SD403
19mmhos)
M4322
-80jiSec
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1N45B
Abstract: No abstract text available
Text: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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SSN1N45B
1N45B
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40822
Abstract: No abstract text available
Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement
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LND150
LND150
DSFP-LND150
B021110
40822
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SD403CY
Abstract: SD403 SD403BD XSD403 high speed TTL in fet
Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
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SD403
SD403
19mmhos)
M4322
80MSec
M4322
SD403CY
SD403BD
XSD403
high speed TTL in fet
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LN1E
Abstract: Marking code mps
Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown
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LND150
DSFP-LND150
A0912908
LN1E
Marking code mps
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transistor marking code 12W SOT-23
Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown
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LND150
LND150
DSFP-LND150
A030609
transistor marking code 12W SOT-23
12w SOT 23 package marking code
marking 12W SOT23
12w marking code of transistor sot 23
12w sot-23
sot-23 12w
12W MARKING sot23
LN1E
Nd150
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transistor marking code 12W SOT-23
Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown
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LND150
DSFP-LND150
A012809
transistor marking code 12W SOT-23
12w marking code sot 23
12w SOT 23 package marking code
marking 12W SOT23
12W MARKING sot23
fet sot-89 marking code
SOT MARKING 213
LN1E
12w marking code of transistor sot 23
Marking code 12w SOT-23
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LN1E
Abstract: No abstract text available
Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown
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LND150
DSFP-LND150
A10310808
LN1E
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BF245
Abstract: transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92
Text: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO BF245 N-CHANNEL JUNCTION FET TO-92 Field for GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage Gate-Source Voltage
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BF245
BF245
300mW
300/xS,
200/xA
transistor BF245
Fet BF245
BF245 TRANSISTOR
FET TO-92
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transistor BF245
Abstract: fet BF245 BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"
Text: BF245 N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for V HF/U H F amplifiers and m ixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V
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BF245
300mW
300/xS,
transistor BF245
fet BF245
transistor BF245 A
BF245 TRANSISTOR
transistor gds
"igss 5 na"
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2SK168
Abstract: VUME
Text: HITACHI 2SK168-SILICON N-CHANNEL JUNCTION FET VHF AMPLIFIER. MIXER, LOCAL OSCILLATOR 1 I 1 _ 1 1 . 1 1 l _ } IVixn. in rrirn JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS (Ta-25*C) [tern Symbol MAXIMUM CHANNEL POWER DISSIPATION CURVE
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2SK168
Ta-23
2SKI68
-30FIGURE
2SK168
VUME
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Untitled
Abstract: No abstract text available
Text: 4ÔE D SD403 CAL06IC CORP 1044322 GGGG2S1 4 m C G C • calocft High Speed DMOS N-Channel Switch CORPORATION V ^P35- Z £ SD403 DESCRIPTION FEATURES • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance,
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SD403
CAL06IC
SD403
19mmhos)
35--as-
O-226A
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Untitled
Abstract: No abstract text available
Text: 3VD223600NEYL 3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD223600NEYL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø ESD improved capability Ø
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3VD223600NEYL
3VD223600NEYL
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K596 b 01
Abstract: K596
Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information
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STK596M
STK596M
O-92M
KST-I017-002
K596M
K596 b 01
K596
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K596
Abstract: K596 b 01 STK596M CAPACITOR MICROPHONE
Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information
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STK596M
O-92M
KST-I017-001
K596
K596 b 01
STK596M
CAPACITOR MICROPHONE
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2SK546
Abstract: No abstract text available
Text: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage
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1790B
l790B
2SK546
-10UA
SC-43
2SK546
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ZVN0117TA
Abstract: t50c
Text: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZVNL120A
ZVN0117TA
100mA
ZVN0117TA
t50c
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2SK546
Abstract: No abstract text available
Text: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage
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1790B
l790B
2SK546
-10uA
2034/2034A
SC-43
7tlt17D7b
2SK546
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