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    N CHANNEL MOSFET 10A 1000V Search Results

    N CHANNEL MOSFET 10A 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET 10A 1000V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10N100P

    Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P 10N100P IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD PDF

    IXFR15N100Q3

    Abstract: 15N100Q3
    Text: Advance Technical Information IXFR15N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 10A Ω 1.2Ω 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR15N100Q3 250ns ISOPLUS247 E153432 15N100Q3 IXFR15N100Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR15N100Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 10A Ω 1.2Ω 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		IXFR15N100Q3 250ns ISOPLUS247 E153432 15N100Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH10N100P IXFV10N100P IXFV10N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions


    Original     		IXFH10N100P IXFV10N100P IXFV10N100PS 300ns PLUS220 10N100P PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		AOTF10N90 AOTF10N90 AOTF10N90L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss


    Original     		AOTF10N90 AOTF10N90 AOTF10N90L O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10090HLL 1000V 10A 0.900Ω POWER MOS 7 R MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		APT10090HLL O-258 O-258 PDF

    IXFH10N100P

    Abstract: No abstract text available
    Text: IXFH10N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 10A Ω 1.4Ω 300ns TO-247 AD Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFH10N100P 300ns O-247 100ms 10N100P 3-12-13-A IXFH10N100P PDF

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description


    Original     		PD-97808 RDHB710SE20A2SX RDHB710SE20A2SX MIL-PRF-38534 PDF

    Ultrasonic humidifier circuit

    Abstract: 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91
    Text: POWER MOSFET APPLICATION NOTES Typical power MOSFET applications 50, I, • A u tom otive: Pow er steering, au to m o tive DC/DC converters 12V DC , electric motor driven tools, and switch replacement • Battery operated fork lifts: Power steering, running, and


    OCR Scan     		100VAC) 80VDC) 100VAC, 0-300W) 100VAC. 0-80W) 100ps/l Ultrasonic humidifier circuit 2SK962 equivalent ups manufacturing transformer diagram 200w dc to ac inverter Circuit diagram ultrasonic humidifier driver circuit transistor 2SK1082 ER038-06 D 83-004 12V DC to 500V AC inverters circuit diagram EAA91 PDF

    INT-944

    Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S PDF

    AN-983

    Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		AN-983 1000C, AN-983 AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840 PDF

    INT-944

    Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
    Text: Index AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics


    Original     		AN-983 INT-944 AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983 PDF

    CRCW12061002F

    Abstract: smd 301 main transformer secondary 6V 200mA specification V9 smd diode LM5030 datasheet AN-1305 C0805C472K5RAC LM3411 LM5030 LM5030EVAL
    Text: National Semiconductor Application Note 1305 Dennis Morgan January 2004 Introduction The output inductor L2 not only smoothes the output voltage waveform, but also generates an auxiliary voltage (by means of its secondary winding) to power the Vcc pin on the


    Original     		LM5030. LM5030EVAL LM5030 AN-1305 CRCW12061002F smd 301 main transformer secondary 6V 200mA specification V9 smd diode LM5030 datasheet AN-1305 C0805C472K5RAC LM3411 PDF

    100A 1000V mosfet

    Abstract: mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A
    Text: MOSFET MODULE SF100CB100 UL;E76102 M SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.


    Original     		SF100CB100 E76102 SF100CB100 300ns 100A 1000V mosfet mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    3 watt 70v zener diode

    Abstract: inkjet print head interface K784P
    Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP


    Original     		00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P PDF

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415 PDF

    SF100CB100

    Abstract: No abstract text available
    Text: MOSFET MODULE SF100CB100 UL;E76102 （M） SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr≦300ns）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		SF100CB100 E76102 SF100CB100 diodetrr300nsreverse VDSS1000V trr300ns 108max ID100A, 63max 50msec10sec PDF

    SF100CB100

    Abstract: fast recovery diode trr Pt mosfet 4805
    Text: MOSFET MODULE SF100CB100 UL;E76102 （M） SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr≦300ns）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		SF100CB100 E76102 SF100CB100 diodetrr300nsreverse VDSS1000V trr300ns 108max ID100A, 63max 50msec10sec fast recovery diode trr Pt mosfet 4805 PDF

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P PDF

    FCA50CC50

    Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
    Text: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the


    Original     		FCA50CC50 E76102 FCA50CC50 trr100nsreverse 30max 31max 50msec10sec 50sec50msec RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506 PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA078A – May 2004 – Revised May 2013 AN-1305 LM5030 Evaluation Board The AN-1305 is an evaluation board the demonstrates a fully featured push-pull converter utilizing the LM5030 100V push-pull current mode PWM controller 1 Introduction


    Original     		SNVA078A AN-1305 LM5030 LM5030EVAL PDF