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    N CHANNEL MOSFET TO220 Search Results

    N CHANNEL MOSFET TO220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET TO220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF830 O-220 UF830L UF830-TA3-T UF830es QW-R502-046

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170

    12N60l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170 12N60l

    Untitled

    Abstract: No abstract text available
    Text: FQPF9N50CF N-Channel QFET FRFET® MOSFET 500 V, 9 A, 850 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has


    Original     		PDF FQPF9N50CF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.


    Original     		PDF 12N65 12N65 QW-R502-583

    12N60L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220 12N60 O-220F O-220F1 QW-R502-170 12N60L

    12N70

    Abstract: UTC12N70
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N70 12N70 12N70L QW-R502-220 UTC12N70

    UTC12N60

    Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220F O-220 12N60 O-220F1 O-262 QW-R502-170 UTC12N60 12n60g 12N60L 12n60 12a 600v mosfet 12A 600V

    12n60a

    Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60a 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G

    80N08

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial


    Original     		PDF 80N08 80N08 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T 80N08L-TQ2-T 80N08G-TQ2-T 80N08L-TQ2-R 80N08G-TQ2-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


    Original     		PDF 18N50 18N50 O-220F1 O-220F2 QW-R502-477

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original     		PDF UF640-P 18OHM, UF640-P O-220 QW-R502-A17

    Untitled

    Abstract: No abstract text available
    Text: FQP13N50CF / FQPF13N50CF N-Channel QFET FRFET® MOSFET 500 V, 13 A, 540 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQP13N50CF FQPF13N50CF FQPF13N50CF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT200N03 Power MOSFET 200A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.


    Original     		PDF UTT200N03 UTT200N03 UTT200N03L-TA3-T UTT200N03G-TA3-T UTT200N03L-TQ2-T UTT200N03G-TQ2-T UTT200N03L-TQ2-R UTT200N03G-TQ2-R QW-R502-758

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching


    Original     		PDF UF830Z UF830ZL-TF3-T UF830ZG-TF3-T QW-R502-612

    specifications of power mosfet

    Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF840 O-220 O-220F1 O-220F2 O-220F O-262 O-263 QW-R502-047 specifications of power mosfet N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

    ISD18A

    Abstract: MOSFET 500V 18A 18n50
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


    Original     		PDF 18N50 18N50 QW-R502-477 ISD18A MOSFET 500V 18A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60K-MT 12N60K-MT QW-R502-B06

    FQPF*11n50cf

    Abstract: FQPF11N50CF FQPF11N50
    Text: FQP11N50CF / FQPF11N50CF N-Channel QFET FRFET® MOSFET 500 V, 11 A, 550 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQP11N50CF/FQPF11N50CF FQP11N50CF FQPF11N50CF FQPF*11n50cf FQPF11N50CF FQPF11N50

    FQPF10N50CF

    Abstract: fqpf10n50
    Text: FQP10N50CF / FQPF10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQP10N50CF FQPF10N50CF FQPF10N50CF fqpf10n50

    12n60a

    Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L QW-R502-170 12n60a UTC12N60 12N-60a 12N60B 12N60L 12N60-A 12N60-B

    19n10l

    Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 19n10l Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R

    UTC12N70

    Abstract: 12N70 220f1 12N70L-TF3-T 12n70l
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N70 12N70 QW-R502-220 UTC12N70 220f1 12N70L-TF3-T 12n70l

    UF840

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T UF840L-TF3T-T UF840