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    N CHANNEL POWER TRENCH MOSFET Search Results

    N CHANNEL POWER TRENCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL POWER TRENCH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management


    Original     		PDF FDMC8878

    Untitled

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8878

    FDMC8878/MAX498CWI-T-datasheet

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management


    Original     		PDF FDMC8878 FDMC8878/MAX498CWI-T-datasheet

    Untitled

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8878

    3006S

    Abstract: 10-6327-01
    Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®


    Original     		PDF FDMS3006SDC FDMS3006SDC 3006S 10-6327-01

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8854

    Untitled

    Abstract: No abstract text available
    Text: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8554

    Untitled

    Abstract: No abstract text available
    Text: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8854

    Untitled

    Abstract: No abstract text available
    Text: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8554

    Untitled

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features tm General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8878

    10.7A

    Abstract: No abstract text available
    Text: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD5353 FDD5353 10.7A

    10.7A

    Abstract: FDD5353
    Text: FDD5353 tm N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD5353 -PA52 FDD5353 10.7A

    Untitled

    Abstract: No abstract text available
    Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 60 A, 2.3 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS86500DC

    Untitled

    Abstract: No abstract text available
    Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 60 A, 3.1 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS86300DC

    FDMC8878

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mΩ Features tm General Description „ Max rDS on = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8878 FDMC8878

    FDMC8854

    Abstract: No abstract text available
    Text: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features tm General Description „ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8854 FDMC8854

    Untitled

    Abstract: No abstract text available
    Text: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features tm General Description ̈ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8854 FDMC8854

    FDMC8878

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mΩ Features tm General Description „ Max rDS on = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8878 FDMC8878

    FDMC86102Z

    Abstract: FDMC86102LZ
    Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDMC86102LZ FDMC86102LZ FDMC86102Z

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT65N03 Preliminary Power MOSFET 65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT65N03 is a N-channel Trench technology using UTC’s advanced Trench technology to provide customers with a minimum on-state resistance, low gate charge and superior


    Original     		PDF UT65N03 UT65N03 UT65N03L-TA3-T UT65N03G-TA3-T QW-R502-556

    Untitled

    Abstract: No abstract text available
    Text: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDMC86106LZ

    FDMS86200

    Abstract: No abstract text available
    Text: Preliminary Datasheet FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m: Features General Description „ Max rDS on = 18 m: at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDMS86200 FDMS86200

    Untitled

    Abstract: No abstract text available
    Text: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDMA8878 FDMA8878