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    N P CHANNEL DUAL POWER MOSFET Search Results

    N P CHANNEL DUAL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N P CHANNEL DUAL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		PDF FDS8958B com/dwg/M0/M08A

    FDS8958B

    Abstract: CQ238
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		PDF FDS8958B FDS8958B CQ238

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		PDF FDS8958B FDS8958B

    Untitled

    Abstract: No abstract text available
    Text: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power ̈ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDD8426H

    cq213

    Abstract: FDD8426H
    Text: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power „ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDD8426H cq213 FDD8426H

    Untitled

    Abstract: No abstract text available
    Text: DUAL N & P CHANNEL MOSFETS XP17x SERIES, TSSOP-8 PACKAGE • LOW ON RESISTANCE, HIGH SPEED SWITCHING AND LOW POWER CONSUMPTION • OPERATING VOLTAGES FROM 1.5V TO 4.5V DUAL N & P CHANNEL MOSFETS TA = 25˚C • • • • • • Part No N Channel XP173A1350VR


    Original     		PDF XP17x XP173A1350VR XP173A1255VR XP173A1195VR XP174A12A8VR XP174A11B6VR XP175A1195VR Si6945DQ Si6946DQ

    Untitled

    Abstract: No abstract text available
    Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQS4900 -300V, FQS4900 FQS4900TF

    Dual N P-Channel

    Abstract: FQS4900
    Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQS4900 -300V, Dual N P-Channel FQS4900

    FDS4897C

    Abstract: Q1/KIA6402P
    Text: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4897C FDS4897C Q1/KIA6402P

    FDS4885C

    Abstract: 40v 7.5a P-Channel N-Channel
    Text: FDS4885C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4885C FDS4885C 40v 7.5a P-Channel N-Channel

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS8958A L86Z
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A CBVK741B019 F011 F63TNR F852 FDS8958A L86Z

    FDS8960C

    Abstract: No abstract text available
    Text: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8960C FDS8960C

    FDS8958A

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    FDS8958A

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    FDS8960C

    Abstract: Dual n Dual N & P-Channel
    Text: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8960C FDS8960C Dual n Dual N & P-Channel

    FDS4895C

    Abstract: PD-46
    Text: FDS4895C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4895C FDS4895C PD-46

    Untitled

    Abstract: No abstract text available
    Text: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4897C

    fds8958

    Abstract: No abstract text available
    Text: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958 fds8958

    Untitled

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A

    Untitled

    Abstract: No abstract text available
    Text: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958 FDS8958 AN-4143: FAN7310) AN-6016: AN-6016 FAN7311) NF073

    Untitled

    Abstract: No abstract text available
    Text: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8960C FDS8960C

    FDS8962C

    Abstract: No abstract text available
    Text: FDS8962C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8962C FDS8962C

    FDS8958

    Abstract: FDS8958A FDS8958A-F085
    Text: FDS8958A_F085 tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958 FDS8958A-F085

    Untitled

    Abstract: No abstract text available
    Text: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N| = 0.10 @ VGS = 10V. power field effect transistors are produced using


    OCR Scan     		PDF NDS9958