Untitled
Abstract: No abstract text available
Text: SÌ6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Rd s <o n ] (&) I d (A) 0.035 @ VGS= 10 v ±4.0 V D* (V) N-Channel 30 0.050 @ VGS = 4.5 V ±3.4 0.045 @ VGS = -1 0 V ±3.5 0.090 @ V gs = -4 .5 V ±2.5 a t -30 P-Channel Dl Q S2 P TSSOP-8 Di Si
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OCR Scan
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6544DQ
6544D
S-56944--
23-Nov-98
Si6544PQ
S-56944--Rev.
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4542DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) 30 N-Channel P-Channel -30 rDS(on) (Q ) I d (A) 0.025 @ VGS = 10 V ± 6.9 0.035 @ VGS = 4.5 V ±5.8 0.032 @ VGS = -10 V ±6.1 0.045 @ VGS = -4.5 V
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OCR Scan
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4542DY
S-54950--Rev.
29-Sep-97
S-54950--
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25S16
Abstract: No abstract text available
Text: _ SÌ4542PY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET Vos (V) N-Channel P-Channel flfW O N) (ß) l D (A) 0 .025 VGs = 10 V ±6.9 0.035 @ VGS = 4,5 V ±5.8 0,032® VGS = -1 0 V ±6.1 0.045 @ VGS = -4 .5 V ±5.1 30 -30
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OCR Scan
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4542PY
23-Nov-98
Si4542DY
S-56944--
25S16
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Si4558DY
Abstract: No abstract text available
Text: SÌ4558DY Vishay Sîliconix N- and P-Channel 30-V D-S MOSFET P R O D U C T SU M M ARY V d sO n N-Channel P-Channel R o s (on ) iß ) Id W 0.04 0 VGS = 10 V ±6 0.060 @ V q s = 4 .5 V ±4.B 30 0.040 @ VGs = “ 10 V ±6 0.070 @ V q S = “ 4-5 V ±4.4 -30
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OCR Scan
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4558DY
SI4558DY
S-56944--Rev.
23-Nov-98
Si4558DY
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Untitled
Abstract: No abstract text available
Text: TEMIC SÌ4539DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) N-Channel 30 P-Channel 30 r DS(on)(^) I d (A) 0.037 @ VGs = 10 V 0.055 @ VGS = 4.5 V 0.053 @ Vgs - —10 V 0.095 @ VGS = -^.5 v ±5.8 ±4.7 ±4.9 ±3.6 Di
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OCR Scan
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4539DY
S-49534--Rev.
6-Oct-97
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Untitled
Abstract: No abstract text available
Text: TEMIC SÌ4558DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel 30 P-Channel 30 I d (A) ±6 ±4.8 ±6 ±4.4 r DS(on)(^) 0.040 @ VGs = 10 V 0.060 @ VGs = 4.5 V 0.040 @ VGS = -10V 0.070 @ VGS = -4.5 V S2 o \JZ S O -8
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OCR Scan
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4558DY
S-49534--Rev.
-Oct-97
06-Oct-97
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Untitled
Abstract: No abstract text available
Text: Temic SÌ6543DQ S e m i c o n d u c t o r s Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V) N-Channel 30 P-Channel I d (A) r DS(on) ( ß ) 30 0.065 @ VGs = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 0.085 @ VGs = -1 0 V ±2.5 0.19 @ VGs = -4-5 V
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OCR Scan
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6543DQ
S-47958--Rev.
15-Apr-96
TSSOP-8/-28
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Untitled
Abstract: No abstract text available
Text: SÌ4532DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) I d (A) (-2) 0.065 @ VGS = 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 30 0.085 @ VGS = —10 V ±3 .5 0.19 @ VGS = —4.5 V ±2 .5 -3 0 S2 Q Di
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4532DY
S-56944--
ov-93
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KI4558DY
Abstract: Transistor Mosfet N-Ch 30V N- and P-Channel 30-V D-S MOSFET
Text: IC IC SMD Type N- and P-Channel 30-V D-S MOSFET KI4558DY PIN Configuration Absolute Maximum Ratings TA = 25 Symbol N-Channel P-Channel Unit Drain-Source Voltage Parameter VDS 30 -30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ = 150 )* TA = 25
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KI4558DY
KI4558DY
Transistor Mosfet N-Ch 30V
N- and P-Channel 30-V D-S MOSFET
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Untitled
Abstract: No abstract text available
Text: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) N-Channel 30 P-Channe! rDS(on) ( ß ) I d (A ) 0.065 @ VGS = 10 V ± 3 .9 0.095 @ VGS = 4.5 V ± 3.1 0.085 @ VGS= - 1 0 V ± 3 .5 0.19 @ V Cs = -4 .5 V
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4532DY
S-49520--
18-Dec-96
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Si4544DY
Abstract: No abstract text available
Text: Si4544DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 –30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "6.5 0.050 @ VGS = 4.5 V "5.4 0.045 @ VGS = –10 V "5.7 0.090 @ VGS = –4.5 V "4.0 S2 SO-8 S1 1 8 D G1
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Si4544DY
S-56944--Rev.
23-Nov-98
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SI4532CDY-T1-GE3
Abstract: Si4532CDY SI4532C
Text: Si4532CDY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.047 at VGS = 10 V 6.0 0.065 at VGS = 4.5 V 5.2 VDS (V) N-Channel 30 P-Channel - 30 0.089 at VGS = - 10 V - 4.3 0.140 at VGS = - 4.5 V - 3.4 Qg (Typ.)
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Si4532CDY
2002/95/EC
Si4532CDY-T1-GE3
11-Mar-11
SI4532C
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si5504
Abstract: Si5504BDC-T1-GE3 Si5504BDC Si5504BDC-T1-E3 TB-3050 SI5504BDC-T1
Text: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)
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Si5504BDC
2002/95/EC
18-Jul-08
si5504
Si5504BDC-T1-GE3
Si5504BDC-T1-E3
TB-3050
SI5504BDC-T1
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Untitled
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Si1539CDL
OT-363
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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N-Channel mosfet sot-363
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Si1539CDL
OT-363
SC-70
Si1539CDL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
N-Channel mosfet sot-363
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list of n channel fet
Abstract: Si5511DC-T1-E3
Text: New Product Si5511DC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g • TrenchFET Power MOSFETs Qg (Typ) APPLICATIONS
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Si5511DC
Si5511DC-T1-E3
08-Apr-05
list of n channel fet
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Si4544DY
Abstract: No abstract text available
Text: Si4544DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4544DY
2002/95/EC
Si4544DY-T1-E3
Si4544DY-T1-GE3
11-Mar-11
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Si4532ADY
Abstract: No abstract text available
Text: Si4532ADY New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.053 @ VGS = 10 V 4.9 0.075 @ VGS = 4.5 V 4.1 0.080 @ VGS = –10 V –3.9 0.135 @ VGS = –4.5 V –3.0 D1 S2
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Si4532ADY
S-00148--Rev.
07-Feb-00
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Si4558DY
Abstract: No abstract text available
Text: Si4558DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 –30 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V "6 0.060 @ VGS = 4.5 V "4.8 0.040 @ VGS = –10 V "6 0.070 @ VGS = –4.5 V "4.4 S2 SO-8 G2 S1 1 8 D G1
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Si4558DY
S-56944--Rev.
23-Nov-98
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084BC
Abstract: Si5511DC-T1-E3 Si5511DC si5511
Text: Si5511DC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g 0.150 at VGS = - 4.5 V - 3.6a 0.256 at VGS = - 2.5 V - 2.7a Qg (Typ.)
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Si5511DC
2002/95/EC
18-Jul-08
084BC
Si5511DC-T1-E3
si5511
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PDF
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marking code EE
Abstract: No abstract text available
Text: Si5511DC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.055 at VGS = 4.5 V 4a,g 0.090 at VGS = 2.5 V 4a,g 0.150 at VGS = - 4.5 V - 3.6a 0.256 at VGS = - 2.5 V - 2.7a Qg (Typ.)
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Si5511DC
2002/95/EC
Si5511DC-T1-E3
Si5511DC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
marking code EE
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PDF
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type N- and P-Channel 30-V D-S MOSFET KI4532DY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25
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KI4532DY
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P-CHANNEL 30V DS MOSFET
Abstract: Si6544DQ
Text: Si6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel –30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V "4.0 0.050 @ VGS = 4.5 V "3.4 0.045 @ VGS = –10 V "3.5 0.090 @ VGS = –4.5 V "2.5 D1 S2 TSSOP-8 8 D2
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Si6544DQ
Conti50
S-56944--Rev.
23-Nov-98
P-CHANNEL 30V DS MOSFET
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