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    N-CHANNEL, 30V, 4.0A, POWER MOSFET Search Results

    N-CHANNEL, 30V, 4.0A, POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
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    N-CHANNEL, 30V, 4.0A, POWER MOSFET Price and Stock

    SAE Power STD-20

    N-channel 60 V, 0.032 Ohm typ., 24 A Power MOSFET in DPAK package
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    Onlinecomponents.com STD-20 292
    • 1 $245.08
    • 10 $126.34
    • 100 $123.81
    • 1000 $123.81
    • 10000 $123.81
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    onsemi CPH6341-TL-W

    P-Channel Power MOSFET, -30V, -5A, 59mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CPH6341-TL-W
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    onsemi NTMFS005P03P8ZT1G

    MOSFET, Power -30V P-Channel, SO-8FL
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    Onlinecomponents.com NTMFS005P03P8ZT1G
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    onsemi NTLJS4D9N03HTAG

    MOSFET, Power, 30V, N-Channel, WDFN6
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    Onlinecomponents.com NTLJS4D9N03HTAG
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    • 10000 $0.3378
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    onsemi CPH6350-TL-W

    P-Channel Power MOSFET, -30V, -6A, 43mΩ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com CPH6350-TL-W
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    Find more N-CHANNEL, 30V, 4.0A, POWER MOSFET price and stock on Findchips.com

    N-CHANNEL, 30V, 4.0A, POWER MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor WT3

    Abstract: No abstract text available
    Text: Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V BR DSS Rds(on) (Ÿ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS


    Original     		WNM3003 OT-23 WNM3003 transistor WT3 PDF

    Untitled

    Abstract: No abstract text available
    Text: STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN6562 STN6562 65mohm 75mohm 105mohm STP6562 PDF

    n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    Abstract: ST3402 MOSFET SOT-23 mosfet vgs 5v
    Text: N Channel Enhancement Mode MOSFET ST3402 4.0A DESCRIPTION The ST3402 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.


    Original     		ST3402 ST3402 OT-23-3L 50m-ohm 65m-ohm OT-23-3L n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR MOSFET SOT-23 mosfet vgs 5v PDF

    ST04N20D

    Abstract: ST04-N
    Text: ST04N20D N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION ST04N20D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		ST04N20D ST04N20D O-252 00V/4 O-252 ST04-N PDF

    SOP-23

    Abstract: 5.8A, 25V, N Channel MOSFET SOP-23-3L switching TRANSISTOR mosfet 30V 40A n channel enhancement MOSFET STN3400 42m-ohm n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR N-Channel, 30V, 4.0A, Power MOSFET
    Text: N Channel Enhancement Mode MOSFET STN3400 5.8A DESCRIPTION The STN3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		STN3400 STN3400 OP-23-3L 38m-ohm 42m-ohm 55m-ohm OT-23-3L SOP-23 5.8A, 25V, N Channel MOSFET SOP-23-3L switching TRANSISTOR mosfet 30V 40A n channel enhancement MOSFET 42m-ohm n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR N-Channel, 30V, 4.0A, Power MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		ST3400SRG ST3400SRG OT-23 STN3400SRG OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		ST3400S23RG ST3400S23RG OT-23-3L STN3400S23RG OT-23-3L PDF

    5.8A, 25V, N Channel MOSFET

    Abstract: Power MOSFET N-Channel sot-23 ST3400SRG marking CODE "25M" SOT23 -3 MARKING 25M SOT23 marking CODE TF-450 TF 450 MOSFET N SOT-23 Diode SOT-23 marking 27
    Text: ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These


    Original     		ST3400SRG ST3400SRG OT-23 STN3400SRG OT-23 5.8A, 25V, N Channel MOSFET Power MOSFET N-Channel sot-23 marking CODE "25M" SOT23 -3 MARKING 25M SOT23 marking CODE TF-450 TF 450 MOSFET N SOT-23 Diode SOT-23 marking 27 PDF

    KHB4D0N80F

    Abstract: khb*4D0N80F2 KHB4D0N80F2
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F1 KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80F khb*4D0N80F2 KHB4D0N80F2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		ST3406 ST3406 OT-23-3L OT-23-3L PDF

    Untitled

    Abstract: No abstract text available
    Text: ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		ST3406SRG ST3406SRG OT-23 OT-23 PDF

    a6ya

    Abstract: ST3406
    Text: ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		ST3406 ST3406 OT-23-3L OT-23-3L a6ya PDF

    KF4N80

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF4N80F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		KF4N80F 10VDSS Fig12. Fig13. Fig14. KF4N80 PDF

    KF4N80

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF4N80F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C A O F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		KF4N80F Fig11. Fig12. Fig13. Fig14. KF4N80 PDF

    MOSFET N SOT-23

    Abstract: Diode SOT-23 marking 27 ST3006SRG Power MOSFET N-Channel sot-23 marking 54 sot23 a6ya sot-23 MARKING CODE 54 N mosfet sot-23 N Channel sot23 sot-23 MARKING CODE NC
    Text: ST3006SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3006SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		ST3006SRG ST3006SRG OT-23 OT-23 MOSFET N SOT-23 Diode SOT-23 marking 27 Power MOSFET N-Channel sot-23 marking 54 sot23 a6ya sot-23 MARKING CODE 54 N mosfet sot-23 N Channel sot23 sot-23 MARKING CODE NC PDF

    khb*4D0N65f

    Abstract: KHB4D0N65F
    Text: SEMICONDUCTOR KHB4D0N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB4D0N65P/F KHB4D0N65P khb*4D0N65f KHB4D0N65F PDF

    KHB4D0N65F

    Abstract: KHB4D0N65P khb*4D0N65f
    Text: SEMICONDUCTOR KHB4D0N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB4D0N65P/F KHB4D0N65P KHB4D0N65F KHB4D0N65P khb*4D0N65f PDF

    khb*4D0N65f

    Abstract: KHB4D0N65F2 KHB4D0N65F KHB4D0N65P
    Text: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB4D0N65P/F/F2 KHB4D0N65P Fig15. Fig16. Fig17. khb*4D0N65f KHB4D0N65F2 KHB4D0N65F KHB4D0N65P PDF

    "VDSS 800V" 40A mosfet

    Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB4D0N80P1/F1/F2 KHB4D0N80P1 "VDSS 800V" 40A mosfet 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2 PDF

    KHB4D0N80F2

    Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet
    Text: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F2 KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original     		KHB4D0N65P/F/F2 KHB4D0N65P Fig15. Fig16. Fig17. PDF

    smd diode 57A

    Abstract: smd 57a N- and P-Channel 30-V D-S MOSFET Transistor Mosfet N-Ch 30V
    Text: Transistors IC SMD Type N- and P-Channel 30-V D-S MOSFET KI4544DY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID


    Original     		KI4544DY smd diode 57A smd 57a N- and P-Channel 30-V D-S MOSFET Transistor Mosfet N-Ch 30V PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP3105LVT 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • • • • • • ID RDS(on) max TA = 25°C 75mΩ @ VGS = -10V -3.9A 105mΩ @ VGS = -4.5V -3.3A N EW PRODU CT -30V Low Input Capacitance Low On-Resistance


    Original     		DMP3105LVT AEC-Q101 DS35504 PDF

    sml1004r2bn

    Abstract: 1004r
    Text: SEHELAB PLC bGE D • DDGOLGfl T2b ■ S M L B MOS POWER 4 5^5 'T'- 3e! - I S SML1004RBN 1000V 4.4A 4.0012 SML904RBN 900V 4.4A 4.0012 SML1004R2BN 1000V 4.0A 4.2012 SML904R2BN 900V 4.0A 4.2012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		SML1004RBN SML904RBN SML1004R2BN SML904R2BN 1004RBN 904R2BN 1004R2BN 904RBN O-247AD 1004r PDF