Untitled
Abstract: No abstract text available
Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored
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SI3446DV
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FDC637AN
Abstract: marking CODE 62A general SSOT-6 CBVK741B019 F63TNR FDC633N SI3446DV
Text: FDC637AN April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored
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FDC637AN
SI3446DV
FDC637AN
marking CODE 62A general
SSOT-6
CBVK741B019
F63TNR
FDC633N
SI3446DV
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2509NZ
Abstract: PDA30 FDW2509NZ
Text: FDW2509NZ Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power
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FDW2509NZ
2509NZ
PDA30
FDW2509NZ
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Untitled
Abstract: No abstract text available
Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and
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FDC6305N
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FDM2452NZ
Abstract: No abstract text available
Text: FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on
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FDM2452NZ
FDM2452NZ
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Untitled
Abstract: No abstract text available
Text: January 2007 FDY300NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v.
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FDY300NZ
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FDMW2512NZ
Abstract: No abstract text available
Text: FDMW2512NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on
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FDMW2512NZ
FDMW2512NZ
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Untitled
Abstract: No abstract text available
Text: FDM2509NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on
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FDM2509NZ
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FDY300NZ
Abstract: SC89 N-Channel 2.5V
Text: January 2007 FDY300NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v.
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FDY300NZ
FDY300NZ
SC89
N-Channel 2.5V
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FDM2509NZ
Abstract: No abstract text available
Text: FDM2509NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on
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FDM2509NZ
FDM2509NZ
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Untitled
Abstract: No abstract text available
Text: FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on
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FDM3300NZ
2000v
25oClopment.
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CBVK741B019
Abstract: F63TNR FDC6305N FDC633N
Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and
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FDC6305N
CBVK741B019
F63TNR
FDC6305N
FDC633N
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CBVK741B019
Abstract: F63TNR FDC6305N FDC633N
Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and
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FDC6305N
CBVK741B019
F63TNR
FDC6305N
FDC633N
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Untitled
Abstract: No abstract text available
Text: FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low
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FDC637AN
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Untitled
Abstract: No abstract text available
Text: FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDS6890A
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Untitled
Abstract: No abstract text available
Text: FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDS6890A
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S1G15
Abstract: No abstract text available
Text: FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDS9926A
S1G15
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9926 mosfet
Abstract: OZ 9926 9926 BATTERY Si9926DY 9926 SO-8 F 9926 MOSFET
Text: Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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Si9926DY
9926 mosfet
OZ 9926
9926 BATTERY
9926 SO-8
F 9926 MOSFET
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CBVK741B019
Abstract: F011 F63TNR F852 FDS6570A FDS9953A L86Z
Text: FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior
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FDS6570A
CBVK741B019
F011
F63TNR
F852
FDS6570A
FDS9953A
L86Z
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Untitled
Abstract: No abstract text available
Text: FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior
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FDS6570A
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FDMA420NZ
Abstract: MO-229
Text: FDMA420NZ Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special
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FDMA420NZ
FDMA420NZ
MO-229
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CBVK741B019
Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Text: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide
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FDS6814
CBVK741B019
F63TNR
F852
FDS6814
FDS9953A
L86Z
AA MARKING CODE SO8
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Untitled
Abstract: No abstract text available
Text: FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDS9926A
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Untitled
Abstract: No abstract text available
Text: FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40m: General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET
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FDMA430NZ
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