air variable capacitor
Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF
Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C
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DE275-102N06A
102N06A
air variable capacitor
13.56mhz c class amp
DE275-102N06A
GME90901
DE275102N06A
102N06
KW 13.56MHz
102KW
10-DOF
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Untitled
Abstract: No abstract text available
Text: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4438
STN4438
Code120
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STN*4440
Abstract: STN4440
Text: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4440
STN4440
0V/10
STN*4440
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Untitled
Abstract: No abstract text available
Text: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These
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STN4826
STN4826
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STN44
Abstract: marking code 82A
Text: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STN4438
STN4438
STN44
marking code 82A
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IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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MAG90X95
Abstract: No abstract text available
Text: MAG90X95 MAG91X96 TEC M A G N A MECHANICAL DATA Dimensions in mm COMPLIMENTARY PAIR DUAL CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS M ax. 1 1.43 0.450 1.09 (0.043) 0.97 (0.038) * * Dia. 1 ' Î • 1.63 (0.064) 1.52 (0.060) 6.35 (0.250) FEATURES
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MAG90X95
MAG91X96
MAG90X95
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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ZVN2106B
Abstract: No abstract text available
Text: ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS on 2.0Ω Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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ZVN2106B
ZVN2106B
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Untitled
Abstract: No abstract text available
Text: ZVN2106B MECHANICAL DATA N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.2A RDS on 2.0 Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
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ZVN2106B
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NTE2940
Abstract: No abstract text available
Text: NTE2940 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain−Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:
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NTE2940
NTE2940
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NTE2940
Abstract: No abstract text available
Text: NTE2940 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D TO220 Type Isolated Package Absolute Maximum Ratings:
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NTE2940
NTE2940
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apm6048
Abstract: APM6048D P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V APM6048DU4 apm60 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 To-252-4
Text: APM6048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description D1 D2 N-Channel 60V/8A, RDS(ON)=40mΩ (typ.) @ VGS=10V RDS(ON)=60mΩ (typ.) @ VGS=4.5V • P-Channel -60V/-8A, RDS(ON)=85mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=105mΩ (typ.) @ VGS=-4.5V
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APM6048DU4
-60V/-8A,
O-252-4
LO-252
apm6048
APM6048D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V
APM6048DU4
apm60
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
STD-020C
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
To-252-4
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Untitled
Abstract: No abstract text available
Text: • M3D E27 1 0 0 5 3 73 0 7fl4 ■ HAS _ 2N6763 2N6764 H a r r is N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistors A u g u st 1991 Features Package TO -20 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS on = 0 .0 8 ÎÎ and 0 .0 5 5 ÎÎ
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2N6763
2N6764
2N6763
2N6764
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B60N06
Abstract: b60 n06 MTB60N06J3 N06 MOSFET
Text: CYStech Electronics Corp. Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB60N06J3 BVDSS 60V ID 12A RDSON MAX 60mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package
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C708J3
MTB60N06J3
O-252
UL94V-0
B60N06
b60 n06
MTB60N06J3
N06 MOSFET
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fma16n60e
Abstract: FMA16N60E,16N60E
Text: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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MS5F6841
FMA16N60E
H04-004-05
H04-004-03
fma16n60e
FMA16N60E,16N60E
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16n60e
Abstract: 16N60 TO-220F JEDEC
Text: DATE CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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FMP16N60E
MS5F6840
H04-004-05
H04-004-03
16n60e
16N60
TO-220F JEDEC
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MV16N60E
Abstract: ic MARKING QG
Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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FMV16N60E
MS5F7021
H04-004-05
H04-004-03
MV16N60E
ic MARKING QG
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TLF35584
Abstract: TLE9180 77GHz Radar TLE5041 TLE8000 TLE8758 RRN7740 BGT24ATR12 TLE8760 RTN7730
Text: Driving the Future of Automotive Electronics Automotive Application Guide www.infineon.com/automotive 2 Contents Challenges and Trends 04 Safety Applications 06 Body Applications 22 Powertrain Applications 37 H EV Applications 48 Enhanced Communication 54
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16n60e
Abstract: 16N60ES
Text: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMH16N60ES
MS5F7248
H04-004-05
H04-004-03
16n60e
16N60ES
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FMP16N60E
Abstract: 16N60E
Text: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMP16N60ES
MS5F7245
H04-004-05
H04-004-03
FMP16N60E
16N60E
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Ic C 141
Abstract: ic MARKING QG
Text: DATE DRAWN Oct.-06-'08 CHECKED Oct.-06-'08 CHECKED Oct.-06-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMV16N60ES
MS5F7246
H04-004-05
H04-004-03
Ic C 141
ic MARKING QG
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Diode SMD SJ 94
Abstract: 16N60ES FUJI DATE CODE DIODE marking code SJ
Text: Device Name DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI16N60ES
FMC16N60ES
FMB16N60ES
MS5F7247
H04-004-03
Diode SMD SJ 94
16N60ES
FUJI DATE CODE
DIODE marking code SJ
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Untitled
Abstract: No abstract text available
Text: DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET N EW PRO D UC T Product Summary Features V BR DSS RDS(on) max -100V 240mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V • • • • • ID T C = 25°C -9A -8A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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DMP10H400SK3
-100V
AEC-Q101
DS35932
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