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    N-CHANNEL MOSFET 400V TO220 Search Results

    N-CHANNEL MOSFET 400V TO220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET 400V TO220 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in


    Original     		18N40 18N40 18N40L-TA3-T 18N40G-TA3-T 18N40L-TF1-T 18N40G-TF1-T 18N40L-TF2-T 18N40G-TF2-T 18N40L-T47-T PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in


    Original     		18N40 18N40 18N40L-TA3-T 18N40G-TA3-T 18N40L-TF1-T 18N40G-TF1-T 18N40L-T47-T 18N40G-T47-T O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in


    Original     		18N40 O-220 18N40 O-220F1 O-247 18N40L-TA3-T 18N40G-TA3-T 18N40L-TF1-T 18N40G-TF1-T PDF

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF PDF

    MOSFET 400V TO-220

    Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF MOSFET 400V TO-220 MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series PDF

    FQPF Series

    Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF FQPF Series MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220 PDF

    FQPF4N50C

    Abstract: FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP11N40C/FQPF11N40C FQPF4N50C FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C PDF

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF PDF

    MOSFET 400V TO-220

    Abstract: FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220
    Text: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C MOSFET 400V TO-220 FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220 PDF

    MOSFET 400V

    Abstract: MOSFET 400V TO-220 p channel mosfet 100v n-Channel mosfet 400v FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C
    Text: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C MOSFET 400V MOSFET 400V TO-220 p channel mosfet 100v n-Channel mosfet 400v FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP11N40C/FQPF11N40C FQP11N40C/FQPF11N40C PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP11N40C/FQPF11N40C O-220 O-220F FQP11N40C/FQPF11N40C PDF

    FQP6N40CF

    Abstract: No abstract text available
    Text: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		FQP6N40CF FQP6N40CF PDF

    Untitled

    Abstract: No abstract text available
    Text: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		FQP6N40CF FQP6N40CF PDF

    UF740L

    Abstract: Power MOSFET 50V 10A UF740L-TA3-T UF740 MOSFET 400V TO-220 UF740-TA3-T UF740-TF3-T 200v 10A mosfet mosfet 10V 10A mosfet 400 V 10A
    Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF740 UF740L UF740-TA3-T UF740L-TA3-T UF740-TF3-T UF740L-TF3-T QW-R502-078 UF740L Power MOSFET 50V 10A UF740L-TA3-T UF740 MOSFET 400V TO-220 UF740-TA3-T UF740-TF3-T 200v 10A mosfet mosfet 10V 10A mosfet 400 V 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 6N40K-TA Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N40K-TA is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching


    Original     		6N40K-TA 6N40K-TA QW-R205-052 PDF

    BUZ76

    Abstract: TA17404 TB334
    Text: BUZ76 Semiconductor Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2264.1 Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.800Ω (BUZ76) field effect transistor designed for applications such as


    Original     		BUZ76 BUZ76) TA17404. BUZ76 TA17404 TB334 PDF

    MOSFET 400V

    Abstract: TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ35 BUZ351
    Text: BUZ351 Semiconductor Data Sheet 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2266.1 Features • 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ35 field effect transistor designed for applications such as


    Original     		BUZ351 BUZ35 TA17434. TB334 O-218AC O220AB) MOSFET 400V TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ351 PDF

    BUZ76A

    Abstract: TA17404 BUZ76 TB334
    Text: BUZ76A Semiconductor Data Sheet 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2265.1 Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 2.500Ω (BUZ76 field effect transistor designed for applications such as


    Original     		BUZ76A BUZ76 TA17404. BUZ76A TA17404 TB334 PDF

    BUZ60B

    Abstract: BUZ60 TA17414 TB334
    Text: BUZ60B Semiconductor Data Sheet 4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2261.1 Features • 4.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.500Ω (BUZ60 field effect transistor designed for applications such as


    Original     		BUZ60B BUZ60 TA17414. BUZ60B TA17414 TB334 PDF

    BUZ60

    Abstract: TA17414 TB334 400V to 6V DC Regulator
    Text: BUZ60 Semiconductor Data Sheet 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET October 1998 File Number 2260.1 Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.000Ω (BUZ60 field effect transistor designed for applications such as


    Original     		BUZ60 BUZ60 TA17414. TA17414 TB334 400V to 6V DC Regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET „ TO-263 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF740 O-263 O-220 O-220F O-220F2 UF740L-TA3-T UF740G-TA3-T UF740L-TF2-T UF740G-TF2-T UF74at PDF

    6n40

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching performance and


    Original     		O-252 O-220 O-220F QW-R502-487 6n40 PDF

    P11NK40ZFP

    Abstract: P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97
    Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP


    Original     		STB11NK40Z STP11NK40ZFP STP11NK40Z O-220 O-220FP STB11NK40Z O-220FP O-220 P11NK40ZFP P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97 PDF