Untitled
Abstract: No abstract text available
Text: SupreMOS FCA36N60NF TM tm N-Channel MOSFET, FRFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCA36N60NF
FCA36N60NF
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APT34M60B
Abstract: APT34M60S MIC4452 AG124
Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M60B
APT34M60S
APT34M60B
APT34M60S
MIC4452
AG124
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Untitled
Abstract: No abstract text available
Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M60B
APT34M60S
APT34M60B
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Untitled
Abstract: No abstract text available
Text: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT34M60B
APT34M60S
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36N60
Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
IXFN SOT227
fast diode SOT-227
D-68623
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Untitled
Abstract: No abstract text available
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)
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32N60
36N60
36N60
32N60
250ns
O-264
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fairchild 4245
Abstract: FCA36N60NF
Text: SupreMOS FCA36N60NF N-Channel tm SupreMOS®, FRFET®,MOSFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS® MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling
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FCA36N60NF
FCA36N60NF
fairchild 4245
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Untitled
Abstract: No abstract text available
Text: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits
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APT34F60B
APT34F60S
250ns
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Untitled
Abstract: No abstract text available
Text: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits
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APT34F60B
APT34F60S
250ns
APT34F60B
APT30
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FCP36N60N
Abstract: fcp36N60 Mosfet application note fairchild FCp Series MOSFET 600V 36A
Text: SupreMOSTM FCP36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCP36N60N
FCP36N60N
fcp36N60
Mosfet application note fairchild
FCp Series
MOSFET 600V 36A
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Fairchild Semiconductor - Process
Abstract: FCP36N60N mosfet 600v
Text: SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90mΩ Features Description • RDS on = 81mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCP36N60N
Fairchild Semiconductor - Process
FCP36N60N
mosfet 600v
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FCB36N60N
Abstract: ISD36A MOSFET 600V 36A
Text: SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS on = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCB36N60N
FCB36N60N
ISD36A
MOSFET 600V 36A
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APT34F60B
Abstract: APT34F60S MIC4452
Text: APT34F60B APT34F60S 600V, 36A, 0.19Ω Max trr ≤250ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT34F60B
APT34F60S
250ns
APT34F60B
APT34F60S
MIC4452
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IXFR64N60P
Abstract: No abstract text available
Text: IXFR64N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = 600V 36A 105m 200ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M
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IXFR64N60P
200ns
ISOPLUS247
E153432
100ms
80N60P3
5-15-14-F
IXFR64N60P
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NTE2995
Abstract: No abstract text available
Text: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC
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NTE2995
NTE2995
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10Kf6 diode
Abstract: 10KF6 10KF6 diode International Rectifier 10kf6 diode rectifier switch mode inverter circuit diagrams IRS2117 IRS21171 IRS2118 JESD22-A114 JESD78
Text: February 18, 2009 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V
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IRS211
IRS2117
IRS2118
0V-20
IRS21171
IRS2118
10Kf6 diode
10KF6
10KF6 diode International Rectifier
10kf6 diode rectifier
switch mode inverter circuit diagrams
IRS21171
JESD22-A114
JESD78
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10Kf6 diode
Abstract: 10KF6 diode International Rectifier 10KF6
Text: February 18, 2009 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V
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IRS211
IRS2117
IRS2118
0V-20
IRS21171
IRS2118
10Kf6 diode
10KF6 diode International Rectifier
10KF6
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relay finder 45.61
Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
Safety10
A331-1-C2A7M
A331-1-C2-A73
24Vdc
110Vac
240Vac
A331-1-C2-A7D
relay finder 45.61
reed 3500 2301 151
MT2C93419
reed 3500 2301
tyco igbt module 25A 1200V
5V SPST DIL Reed Relay
Transistor tag 9013
Triac TAG 9013
3258 smd led
varistor BS415
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schematic diagram 230VAC to 24VDC POWER SUPPLY
Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element14
schematic diagram 230VAC to 24VDC POWER SUPPLY
48V 30A SPDT RELAY
IM03D
PCH-124
N mosfet 250v 600A
VARISTOR 275 L20
PA66 - GF 25 relay
marking code W16 SMD Transistor
90W 19.5V Power Adapter pcb
G6CU-2117P
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10Kf6 diode
Abstract: No abstract text available
Text: October 29th, 2008 IRS211 7,71,8 (S) SINGLE CHANNEL DRIVER Product Summary IC Features • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20V
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IRS211
IRS2117
IRS2118
0V-20
IRS21171
IRS2118
200Additional
10Kf6 diode
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220 volt ac relays switch ups converter circuit
Abstract: HUF76639 TO-251 footprint 6 PIN SMD IC FOR SMPS linear technology 6 PIN SMD IC 36A 6 FOR SMPS huf75652 MA8630 HIP1011 HIP6000 HIP6021
Text: INS-Power_NL-insert-F 11/1/99 4:21 PM Page 1 For information, technical assistance, local sales, or distributor office, call 1-888-intersil and ask for ext. 7956 • Internet www.intersil.com • Technical Assistance E-mail: [email protected] sales office headquarters
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1-888-intersil
O-263
HUF76633S3S
FN4693
HUF76629D3S
FN4692
O-252
HUF76619D3,
HUF76619D3S
220 volt ac relays switch ups converter circuit
HUF76639
TO-251 footprint
6 PIN SMD IC FOR SMPS linear technology
6 PIN SMD IC 36A 6 FOR SMPS
huf75652
MA8630
HIP1011
HIP6000
HIP6021
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CIRCUIT BREAKER AEG me 800
Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
Text: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.
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IR2133 application note
Abstract: IR2133 application notes
Text: Data Sheet No. PD60107 revX IR2133/IR2135 J&S & (PbF) IR2233/IR2235(J&S) & (PbF) 3-PHASE BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V or+1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10V/12V to 20V DC and
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PD60107
IR2133/IR2135
IR2233/IR2235
0V/12V
28-Lead
IR2133 application note
IR2133 application notes
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36N60
Abstract: 32N60 D-68623 ld25 sot-223
Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data IXFK/FN 36N60 IXFK/FN 32N60 HiPerFET Power MOSFET D vv DSS ^D25 600V 600V 36A 32A DS on 0.18Q 0.25Q 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions
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32N60
32N60
36N60
36N60
250ns
D-68623
ld25 sot-223
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