b9nk60zd
Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W
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STB9NK60ZD
STF9NK60ZD
STP9NK60ZD
D2PAK/TO-220FP/TO-220
STF9NK60ZD
O-220FP
O-220
b9nk60zd
p9nk60z
N-Channel mosfet 600v 7A
P9NK60ZD
zener diode 3.0 b2
p9nk
MOSFET IGSS 100A
zener 600v
zener diode 15v
st 220 f1
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching
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7N60A
7N60A
VQW-R502-111
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7A600V
Abstract: DB-186 195mH
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced
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O-220AB
DB-100
7A600V
DB-186
195mH
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Untitled
Abstract: No abstract text available
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state
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O-220FP
DB-100
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mosfet 600V 7A N-CHANNEL
Abstract: DB-199 DB199
Text: TAK CHEONG N-Channel Power MOSFET 7A, 600V, 1.2Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced
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O-220FP
DB-100
mosfet 600V 7A N-CHANNEL
DB-199
DB199
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SVD7N60F
Abstract: TO-220F-3L
Text: SVD7N60T/SVD7N60F 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD7N60T/SVD7N60F
SVD7N60T
O-220-3L
50Unit/Totes:
O-220F-3L
SVD7N60F
TO-220F-3L
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MOSFET 600V 7A
Abstract: mosfet 600V 7A N-CHANNEL A11 MARKING TSM7N60 10SEC MOSFET A11 A11 MARKING CODE
Text: TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N60
ITO-220
O-220
TSM7N60
MOSFET 600V 7A
mosfet 600V 7A N-CHANNEL
A11 MARKING
10SEC
MOSFET A11
A11 MARKING CODE
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AOT7N60
Abstract: mosfet 600V 7A N-CHANNEL AOT12N60 AOTF12N60 AOTF7N60
Text: AOT7N60/AOTF7N60 600V, 7A N-Channel MOSFET General Description Features The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
AOTF7N60
AOT7N60
mosfet 600V 7A N-CHANNEL
AOT12N60
AOTF12N60
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SSF7N60A
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET SSF7N60A FEATURES BVDSS = 600V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 600V
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SSF7N60A
SSF7N60A
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mosfet 600V 7A N-CHANNEL
Abstract: AOT4N60 AOT7N60 AOTF7N60
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
mosfet 600V 7A N-CHANNEL
AOT4N60
AOT7N60
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MOSFET 600V 7A
Abstract: BLV7N60
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
MOSFET 600V 7A
BLV7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
O-220
O-220F
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AOTF7N60L
Abstract: AOTF7N60 AOT7N60
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
O-220
O-220F
AOTF7N60L
AOT7N60
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Untitled
Abstract: No abstract text available
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
AOT7N60L
AOTF7N60L
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Untitled
Abstract: No abstract text available
Text: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOD7N60/AOI7N60
AOD7N60
AOI7N60
19ABA
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N-Channel mosfet 600v 7A
Abstract: mosfet 600V 7A N-CHANNEL BLV7N60
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
N-Channel mosfet 600v 7A
mosfet 600V 7A N-CHANNEL
BLV7N60
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mosfet 600V 7A N-CHANNEL
Abstract: BLV7N60
Text: BLV7N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 1.0Ω Ω • Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
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BLV7N60
mosfet 600V 7A N-CHANNEL
BLV7N60
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Untitled
Abstract: No abstract text available
Text: AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOD7N60/AOI7N60
AOD7N60
AOI7N60
O251A
AOI7N60
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Untitled
Abstract: No abstract text available
Text: AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT7N60/AOTF7N60
AOT7N60
AOTF7N60
O-220
O-220F
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p7n60
Abstract: F7N60 m2828 n60p ga 132
Text: PJP7N60 / PJF7N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 600V, RDS ON =1.2Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP7N60
PJF7N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
p7n60
F7N60
m2828
n60p
ga 132
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MOSFET 600V 7A
Abstract: mosfet 600V 7A N-CHANNEL N-Channel mosfet 600v 7A mosfet 600v transistor Electronic ballast mosfet 600V 7A N-CHANNEL TO N-Channel 600V MOSFET n-channel mosfet transistor ITO-220 MOSFET 600V switching
Text: Preliminary TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM7N60
ITO-220
O-220
TSM7N60
MOSFET 600V 7A
mosfet 600V 7A N-CHANNEL
N-Channel mosfet 600v 7A
mosfet 600v
transistor Electronic ballast
mosfet 600V 7A N-CHANNEL TO
N-Channel 600V MOSFET
n-channel mosfet transistor
ITO-220
MOSFET 600V switching
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Untitled
Abstract: No abstract text available
Text: AOTF7T60 600V,7A N-Channel MOSFET General Description Product Summary The AOTF7T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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AOTF7T60
AOTF7T60
AOTF7T60L
O-220F
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