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    N-CHANNEL MOSFET TO-247 50A Search Results

    N-CHANNEL MOSFET TO-247 50A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET TO-247 50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STW54NM65N

    Abstract: No abstract text available
    Text: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 TO-247


    Original     		PDF STW54NM65N O-247 STW54NM65N

    IXTP50n25

    Abstract: IXTP*50N25T IXTP50N25T 50n25 IXTQ50N25T 50N25T IXTA50N25T ixth50n25t N-channel MOSFET to-247 50a ixtq50n25
    Text: Preliminary Technical Information Trench Gate Power MOSFET IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T VDSS ID25 = = 250V 50A Ω 50mΩ RDS on ≤ N-Channel Enhancement Mode TO-247 (IXTH) TO-263 (IXTA) G S G (TAB) D TO-220 (IXTP) G (TAB) S Symbol Test Conditions


    Original     		PDF IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T O-247 O-263 O-220 062in. 50N25T IXTP50n25 IXTP*50N25T 50n25 IXTQ50N25T ixth50n25t N-channel MOSFET to-247 50a ixtq50n25

    DS100187A

    Abstract: IXTV02N250S IXTH02N250 PLUS220SMD 02N250
    Text: Preliminary Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V


    Original     		PDF IXTH02N250 IXTV02N250S 200mA O-247 100ms 02N250 10-20-10-B DS100187A IXTV02N250S IXTH02N250 PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH220N075T IXTQ220N075T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


    Original     		PDF IXTH220N075T IXTQ220N075T O-247 220N075T 11-20-06-B

    IXTH220N075T

    Abstract: IXTQ220N075T NS472
    Text: Preliminary Technical Information IXTH220N075T IXTQ220N075T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


    Original     		PDF IXTH220N075T IXTQ220N075T O-247 220N075T 11-20-06-B IXTH220N075T IXTQ220N075T NS472

    3232I

    Abstract: IXTH230N085T IXTQ230N085T
    Text: Preliminary Technical Information IXTH230N085T IXTQ230N085T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


    Original     		PDF IXTH230N085T IXTQ230N085T O-247 230N085T 3232I IXTH230N085T IXTQ230N085T

    IXTA50N25T

    Abstract: IXTH50N25T ixtp50n25t IXTQ50N25T IXTP50n25 IXTP*50N25T 50N25T 50n25 DS99346B ixtq50n25
    Text: Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T VDSS ID25 = = 250V 50A Ω 60mΩ RDS on ≤ N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T O-263 O-220AB O-247 062in. 50N25T 1-26-10-A IXTH50N25T IXTQ50N25T IXTP50n25 IXTP*50N25T 50n25 DS99346B ixtq50n25

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH230N085T IXTQ230N085T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings


    Original     		PDF IXTH230N085T IXTQ230N085T O-247 230N085T

    Untitled

    Abstract: No abstract text available
    Text: IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Trench Gate Power MOSFET VDSS ID25 = = 250V 50A Ω 60mΩ RDS on ≤ N-Channel Enhancement Mode TO-3P (IXTQ) TO-220AB (IXTP) TO-263 AA (IXTA) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T O-220AB O-263 O-247 062in. 50N25T 1-26-10-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTH280N055T IXTQ280N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 280 A Ω ≤ 3.2 mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTH280N055T IXTQ280N055T O-247 280N055T

    IXTH180N085T

    Abstract: IXTQ180N085T
    Text: Preliminary Technical Information IXTH180N085T IXTQ180N085T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 85 V = 180 A ≤ 5.5 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTH180N085T IXTQ180N085T O-247 180N085T IXTH180N085T IXTQ180N085T

    182N055T

    Abstract: T182N IXTH182N055T IXTQ182N055T ixtq182n055 182N055
    Text: Preliminary Technical Information IXTH182N055T IXTQ182N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55 V = 182 A ≤ 5.0 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTH182N055T IXTQ182N055T O-247 182N055T 1-06-A 182N055T T182N IXTH182N055T IXTQ182N055T ixtq182n055 182N055

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH250N075T IXTQ250N075T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 75 V = 250 A Ω ≤ 4.0 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTH250N075T IXTQ250N075T O-247 250N075T 1-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A Ω ≤ 6.4 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTH180N10T IXTQ180N10T O-247 180N10T 1-20-06-A

    IXTH250N075T

    Abstract: IXTQ250N075T 250N075T 33na5
    Text: Preliminary Technical Information IXTH250N075T IXTQ250N075T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 75 V = 250 A Ω ≤ 4.0 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTH250N075T IXTQ250N075T O-247 250N075T 1-08-A IXTH250N075T IXTQ250N075T 250N075T 33na5

    IXTH160N10T

    Abstract: IXTQ160N10T
    Text: Preliminary Technical Information IXTH160N10T IXTQ160N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V


    Original     		PDF IXTH160N10T IXTQ160N10T O-247 160N10T 1-16-06-A IXTH160N10T IXTQ160N10T

    200N1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTH200N10T IXTQ200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MW 100 100 V V


    Original     		PDF IXTH200N10T IXTQ200N10T O-247 200N10T 11-03-06-B 200N1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V


    Original     		PDF IXTH160N10T IXTQ160N10T O-247 160N10T 1-16-06-A

    Untitled

    Abstract: No abstract text available
    Text: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH230N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient


    Original     		PDF IXFH230N075T2 O-247 230N075T2 02-26-10-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55 V = 182 A ≤ 5.0 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C


    Original     		PDF IXTH182N055T IXTQ182N055T O-247 182N055T 1-06-A

    IXFH230N075T2

    Abstract: No abstract text available
    Text: TrenchT2TM HiperFETTM Power MOSFET IXFH230N075T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient


    Original     		PDF IXFH230N075T2 O-247 230N075T2 02-26-10-C IXFH230N075T2

    IXTH150N17T

    Abstract: 150N17T n-channel, 85v, 75a
    Text: Preliminary Technical Information IXTH150N17T Power MOSFET TrenchHVTM VDSS ID25 = 175V = 150A Ω ≤ 12mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTH150N17T O-247 150N17T IXTH150N17T n-channel, 85v, 75a

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTH280N055T IXTQ280N055T RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 280A Ω ≤ 3.2mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTH280N055T IXTQ280N055T O-247 280N055T 5-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH220N055T IXTQ220N055T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Maximum Ratings


    Original     		PDF IXTH220N055T IXTQ220N055T O-247 220N055T 9-06-A