Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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BSS83 M74
Abstract: mosfet handbook PHILIPS MOSFET MARKING Mosfet n-channel BSS83 MDA251 MDA250 transistor DATA REFERENCE handbook MAM389 philips bss83
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSS83 MOSFET N-channel enhancement switching transistor Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor
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BSS83
OT143
BSS83 M74
mosfet handbook
PHILIPS MOSFET MARKING
Mosfet n-channel
BSS83
MDA251
MDA250
transistor DATA REFERENCE handbook
MAM389
philips bss83
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depletion MOSFET
Abstract: n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor
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BSD22
OT143
depletion MOSFET
n channel depletion MOSFET
depletion mode mosfet
MOSFET HAndbook
mosfet depletion
depletion mode power mosfet
BD 100 V
n mosfet depletion note
BSD22
Mosfet n-channel
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
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uPA2352
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2352 Dual N-CHANNEL MOSFET DESCRIPTION OUTLINE DRAWING Unit: mm The μPA2352 is a Dual N-channel MOSFET designed for LithiumIon battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
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PA2352
PA2352
uPA2352
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12N60l
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
QW-R502-170
12N60l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10V
QW-R502-914,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
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12N65
12N65
QW-R502-583
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12N60L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220
12N60
O-220F
O-220F1
QW-R502-170
12N60L
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12N70
Abstract: UTC12N70
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
12N70L
QW-R502-220
UTC12N70
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UTC12N60
Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
O-220F
O-220
12N60
O-220F1
O-262
QW-R502-170
UTC12N60
12n60g
12N60L
12n60 12a 600v
mosfet 12A 600V
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12n60a
Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60a
12N60L
12n60 dc
12n60b
12A 650V MOSFET
12N-60a
power mosfet 200A
12N60L-x-TF3-T
12N60G
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF185 The RF MOSFET Line RF POWER F ield -E ffect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement-Mode Lateral MOSFET High Gain, Rugged Device
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MRF185
MRF185
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer
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UF640-P
18OHM,
UF640-P
O-220
QW-R502-A17
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Mosfet N-Channel 19N10, TO-251
Abstract: 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10
QW-R502-261
Mosfet N-Channel 19N10, TO-251
19n10
19N10L-TM3-T
19n10l
19N10G-TN3-R
IS156
100V n-channel MOSFET
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60K-MT
12N60K-MT
QW-R502-B06
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12n60a
Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
QW-R502-170
12n60a
UTC12N60
12N-60a
12N60B
12N60L
12N60-A
12N60-B
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19n10l
Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10
QW-R502-261
19n10l
Mosfet N-Channel 19N10, TO-251
19n10
mosfet
19N10G-TQ2-T
19N10G-TN3-R
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UTC12N70
Abstract: 12N70 220f1 12N70L-TF3-T 12n70l
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
QW-R502-220
UTC12N70
220f1
12N70L-TF3-T
12n70l
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12n60 dc
Abstract: 12n60
Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N60
12N60
12N60L
12N60G
QW-R502-170
12n60 dc
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19n10
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the
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19N10
QW-R502-261
19n10
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12n70
Abstract: 12n70g 12N70L-TF3-T 12N70-TF1-T power mosfet 200A 60A 45V TO-220F 12N70-TF3-T 480-V 12N70L-TA3-T BY 220 diode
Text: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.
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12N70
12N70
12N70L
12N70G
QW-R502-220
12n70g
12N70L-TF3-T
12N70-TF1-T
power mosfet 200A
60A 45V TO-220F
12N70-TF3-T
480-V
12N70L-TA3-T
BY 220 diode
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Untitled
Abstract: No abstract text available
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
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20V P-Channel Power MOSFET
Abstract: US6M2
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
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