SELF vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER
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MRF134
68-ohm
AN215A
SELF vk200
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Untitled
Abstract: No abstract text available
Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
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ARF300
45MHz
ARF300
45MHz.
ARF301
Rating-4948
micnotes/1810
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Untitled
Abstract: No abstract text available
Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
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ARF300
45MHz
ARF300
45MHz.
ARF301
micnotes/1810
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4948
Abstract: ARF300 ARF301 50VDSS
Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
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ARF300
45MHz
ARF300
45MHz.
ARF301
4948
50VDSS
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4948
Abstract: ARF300 ARF301 class E power amplifier 13.56 300w class ab amplifier microsemi application note
Text: ARF300 125V, 300W, 45MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL RF
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ARF300
45MHz
ARF300
45MHz.
ARF301
micnotes/1810
4948
class E power amplifier 13.56
300w class ab amplifier
microsemi application note
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MRF255 equivalent
Abstract: electrolytic capacitor 470 mrf255
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255
MRF255 equivalent
electrolytic capacitor 470
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J115 mosfet
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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10pFD
50Vdc
1N5347B,
RF177
J115 mosfet
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J945
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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MarketinC14
10nFD
50Vdc
1N5347B
20Vdc
RF177
J945
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MRF255 equivalent
Abstract: mrf255
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255
MRF255 equivalent
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PDF
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RF MOSFETs
Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz
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MRF173.
AN721,
MRF173
RF MOSFETs
motorola bipolar transistor data manual
application MOSFET transmitters fm
amplifier RF CLASS B FET MOSFET
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uhf tv power transistor 250w
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push
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MRF176GV
MRF176GU
MRF176GV
MRF176G
MRF176
MRF176GU
uhf tv power transistor 250w
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transistors equivalent
Abstract: arco capacitors 262
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal output stages up to 150 MHz frequency range. 150 W, to ISO MHz N-CHANNEL MOS LINEAR RF POWER
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MRF140
transistors equivalent
arco capacitors 262
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motorola rf Power Transistor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
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MRF9002R2/D
MRF9002R2
MRF9002R2
MRF9002R2/D
motorola rf Power Transistor
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MRF161
Abstract: No abstract text available
Text: MRF161 SILICON N-CHANNEL RF POWER MOSFET PACKAGE STYLE .500 4L FLG DESCRIPTION: The MRF161 is an EnhancementMode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.0 to 400 MHz. .112x45° A S
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MRF161
MRF161
112x45°
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SU 179 transistor
Abstract: s227
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen
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MRF5035
MRF5035
AN215A,
MRF5035.
AN721,
RF5035
SU 179 transistor
s227
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sp 0937
Abstract: VK200 inductor of high frequencies Nippon capacitors
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
sp 0937
VK200 inductor of high frequencies
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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MRF177/D
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ARF301
Abstract: No abstract text available
Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF
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ARF301
45MHz
ARF301
45MHz.
ARF300
micnotes/1810
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ARF301
Abstract: "RF MOSFET" 300W ARF300
Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF
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ARF301
45MHz
ARF301
45MHz.
ARF300
"RF MOSFET" 300W
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Untitled
Abstract: No abstract text available
Text: ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF
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ARF301
45MHz
ARF301
45MHz.
ARF300
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capacitor 2200 micro M
Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
Text: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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MRF21010
MRF21010LR1
MRF21010LSR1
MRF21010LR1
capacitor 2200 micro M
chip resistors bourns
MACOM SOT23 MARKING
marking us capacitor pf l1
sot-23/BC847
MRF21010
MRF21010LSR1
macom marking
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MRF161
Abstract: J141 mosfet fet j141
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r
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MRF161
MRF161,
MRF161
J141 mosfet
fet j141
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zener diode 7c3
Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Text: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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MRF255/D
2PHX34608Q
zener diode 7c3
electrolytic capacitor 470
Nippon capacitors
MRF255 equivalent
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PDF
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F1 J37
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF284 MRF284S The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 30 W, 2000 MHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for PCN and PCS base station applications at frequencies from
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Imp954
3b7255
MRF284
MRF284S
F1 J37
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