N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Search Results

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LP334KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF511 Abstract: Bf513 Text: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) BF510 R77/02/pp9 BF511 Bf513	PDF
BF510 Abstract: BF511 BF512 BF513 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect	Original	BF510 BF510) BF511) BF512) BF513) R77/02/pp9 BF511 BF512 BF513	PDF
J112 Abstract: Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na" Text: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS [VHC3RO ELECTRONICS Jill, J112, J113 are N-channel silicon , junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS -35 V 50mA	OCR Scan	T0-92 350mW VDS40 80x69477 3-/T10371 J112 Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"	PDF
J113 Abstract: J112 Field Effect Transistors j112 ltd J111 VDS40 "igss 1 na" Text: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS TO-92 Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage	OCR Scan	350mW vds40 00x69477 J113 J112 Field Effect Transistors j112 ltd J111 "igss 1 na"	PDF
MMT3823 Abstract: micro-T Package Text: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is	OCR Scan	MMT3823 100-MHz MMT3823 micro-T Package	PDF
BF545A_BF545B_BF545C Abstract: BF545B Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF545A; BF545B; BF545C BF545A) BF545A BF545A_BF545B_BF545C BF545B	PDF
Untitled Abstract: No abstract text available Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF556A; BF556B; BF556C BF556A	PDF
Untitled Abstract: No abstract text available Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF545A; BF545B; BF545C BF545A) BF545A	PDF
BF556A_BF556B_BF556C Abstract: No abstract text available Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.	Original	BF556A; BF556B; BF556C BF556A BF556A_BF556B_BF556C	PDF
MPF4391 Abstract: MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391 Text: MPF4391, MPF4392, MPF4393 SILICON SILICON N-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (T yp e A ) Junction F ield -E ffect Transistors designed for chopper and high-speed switching applications.	OCR Scan	MPF4391, MPF4392, MPF4393 MPF4391 MPF4392 MPF4391 MPF4392 4392 a ic moox MPF4393 MPF 120 MPF-4391	PDF
2N3822 Abstract: 2N3822 equivalent J2N3822 Text: 2N3822 A_ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency am plifier applications. The 2 N 3 8 2 2 features low gate	OCR Scan	2N3822 2N3822 100ms 2N3822 equivalent J2N3822	PDF
Untitled Abstract: No abstract text available Text: 2N3822 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon junction field-effect transistor, designed primarily for small-signal general purpose high-frequency amplifier applications. The 2N3822 features low gate leakage current and low input capacitance.	OCR Scan	2N3822 2N3822	PDF
Untitled Abstract: No abstract text available Text: 2N 3823 J V N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended for v.h.f. amplifier and mixer applications in industrial service. QUICK REFERENCE DATA	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE \| BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source	OCR Scan	bbS3T31 BFR101A BFR101B	PDF

Untitled Abstract: No abstract text available Text: BF410A to D _ J\ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.	OCR Scan	BF410A BF410 BF410B; BF410C BF410D;	PDF
yn 1018 Abstract: MPF820 RS-50S Scans-00100834 Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.	OCR Scan	MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834	PDF
pmbfj310 Abstract: No abstract text available Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION	Original	PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310	PDF
BF545A Abstract: BF545B BF545C Text: BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken	Original	BF545A; BF545B; BF545C MSC895 BF545A) BF545A BF545B BF545C	PDF
u175 Abstract: MPF112 Text: MPF 112 SILICON SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Depletion Mode (Type A ) device designed fo r V H F am plifier and mixer applications. • Low Cross-Modulation Distortion • Low Transfer Capacitance - C rss = 3.0 pF (Typ) @ V q $ = 10 Vdc	OCR Scan	MPF112 u175 MPF112	PDF
mrc145 Abstract: MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149 Text: BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken	Original	BF556A; BF556B; BF556C MSC895 mrc145 MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149	PDF
PN4393 Abstract: PN4391 PN4392 Text: PN4391 PN4392 PN4393 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical n-channel junction field-effect transistors in plastic TO-92 envelopes with the gate connected to the case. The transistors are intended for use in analog switches, commutators and	OCR Scan	PN4391 PN4392 PN4393 PN4393	PDF
Untitled Abstract: No abstract text available Text: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended for hi-fi amplifiers and other audio-frequency equipment.	OCR Scan	BC264A tjtiS3T31 0D3S715	PDF
1117 S Transistor Abstract: BFR101B BFR101A Text: 711002b D0bTlb4 435 • PHIN BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed prim arily fo r use as a source follow er w ith the input protected against successive voltage surges by a forward and reverse integrated	OCR Scan	711002b BFR101A BFR101B BFR101A 1117 S Transistor BFR101B	PDF
2SK660 Abstract: 2SK66 Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance	Original	2SK660 2SK660 2SK66	PDF

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Search Results

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Result Highlights (5)

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR Datasheets Context Search

BF511

BF510

J112

J113

MMT3823

BF545A_BF545B_BF545C

Untitled

Untitled

BF556A_BF556B_BF556C

MPF4391

2N3822

Untitled

Untitled

Untitled

Untitled

yn 1018

pmbfj310

BF545A

u175

mrc145

PN4393

Untitled

1117 S Transistor

2SK660