Untitled
Abstract: No abstract text available
Text: 3VD223600NEYL 3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD223600NEYL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø ESD improved capability Ø
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3VD223600NEYL
3VD223600NEYL
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ZVN0117TA
Abstract: t50c
Text: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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ZVNL120A
ZVN0117TA
100mA
ZVN0117TA
t50c
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Untitled
Abstract: No abstract text available
Text: IRFNL210B N-Channel B-FET 200 V, 1.0 A, 1.5 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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IRFNL210B
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1N45B
Abstract: No abstract text available
Text: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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SSN1N45B
1N45B
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40822
Abstract: No abstract text available
Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement
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LND150
LND150
DSFP-LND150
B021110
40822
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BC237
Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,
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BSS138LT1
OT-23
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
2N5551 SOT23
2n2222 sot-23
418 motorola
j112 fet
free transistor BC547 temperature
2N3819 junction fet
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K596 b 01
Abstract: K596
Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information
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STK596M
STK596M
O-92M
KST-I017-002
K596M
K596 b 01
K596
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ZVN4306A
Abstract: DSA003784
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306A ISSUE 3 – JULY 94 FEATURES * 60 Volt VDS * RDS on = 0.33Ω * Spice model available D G APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
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ZVN4306A
ZVN4306A
DSA003784
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ZVNL120A
Abstract: ZVNL120C
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120C ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold APPLICATIONS * Telephone handsets G D S E-Line TO92 Compatible REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZVNL120C
ZVNL120A
250mA
ZVNL120C
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K596
Abstract: K596 b 01 STK596M CAPACITOR MICROPHONE
Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information
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STK596M
O-92M
KST-I017-001
K596
K596 b 01
STK596M
CAPACITOR MICROPHONE
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DS200
Abstract: ZVN0120A ZVN0124A DSA003781
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible REFER TO ZVN0124A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE
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ZVN0120A
ZVN0124A
250mA
DS200
ZVN0120A
DSA003781
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED PLEASE USE ZVN4424A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424A/C ZVN4424A/C ISSUE 3 – August 1994 FEATURES * Compact E-LINE TO92 style package * 240 Volt BVDS * RDS(on)=4.3Ω Typical at VGS=2.5V * Low threshold * Fast switching
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ZVN4424A
ZVN4424A/C
ZVN4424
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2n5555 Vgs(off)
Abstract: 2N5555 CS 150 10v
Text: 2N5555 ♦I N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RA T I N G S Tfl=25°C unless otherwise noted
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2N5555
2n5555 Vgs(off)
CS 150 10v
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MIP504
Abstract: TO-92NL TO92NL 3sk287 3SK282 "Intelligent Power Device"
Text: FET, IGBT, IPD • IPDs Intelligent Power Device (continued) Application Output Breakdown Input Voltage Voltage Type No. V Non-insulation A M IP 4 0 3 type power supply Packa ge Output MOS FET Features 25mA (at 5V) • O v e r cu rre n t protection built-in
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MIP803
15/70mA
140kHz
140kH2
MIP80ute
3SK241
3SK272
3SK273
3SK287
3SK282
MIP504
TO-92NL
TO92NL
3SK282
"Intelligent Power Device"
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2SK291
Abstract: No abstract text available
Text: HITACHI 2SK291-SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY LOW NOISE AMPLIFIER n _ Î j_ !. IXuii 2 StHJTli 3 C*tc ia tr/n JEDEC TO-92) MAXIMUM CHANNEL POWER DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS {T&=25#C) Tieni Symbol 2SK29I
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2SK291
2SK29I
2SK291
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Untitled
Abstract: No abstract text available
Text: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.
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Q0175S3
BSJ111
BSJ112
BSJ113
rBSJ113
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2N3819 junction fet
Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
Text: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field
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2N3819
200UA
2N3819 junction fet
transistor 2N3819
2N3O19
2N3819 fet
2n3819 transistor
VGD25
200UA
2N3819
VDS1
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2SK546
Abstract: No abstract text available
Text: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage
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1790B
l790B
2SK546
-10UA
SC-43
2SK546
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Untitled
Abstract: No abstract text available
Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
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SD403
SD403
19mmhos)
M4322
-80jiSec
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2SK546
Abstract: No abstract text available
Text: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage
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1790B
l790B
2SK546
-10uA
2034/2034A
SC-43
7tlt17D7b
2SK546
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sd403
Abstract: CD11G
Text: High Speed DMOS N-Channel Switch caioqic CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
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SD403
SD403
19mmhos)
SD40tance
CD11G
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Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement
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2N7000
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SD403CY
Abstract: SD403 SD403BD XSD403 high speed TTL in fet
Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
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SD403
SD403
19mmhos)
M4322
80MSec
M4322
SD403CY
SD403BD
XSD403
high speed TTL in fet
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2SK108
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SK108 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION Unfcmm OUTLINE DRAWING Mitsubishi 2SK108 is a silicon N channnel junction type FET. It is especially ¿5.6M AX designed for low frequency low noise amplify application.
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2SK108
2SK108
100Hz)
70Qtyp
SC-43
10Vrms
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